发明申请
- 专利标题： Tri-gate devices and methods of fabrication
- 专利标题（中）： 三栅极器件和制造方法
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申请号： US11588066申请日： 2006-10-25
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公开(公告)号： US20070034972A1公开(公告)日： 2007-02-15
- 发明人: Robert Chau , Brian Doyle , Jack Kavalieros , Douglas Barlage , Suman Datta
- 申请人： Robert Chau , Brian Doyle , Jack Kavalieros , Douglas Barlage , Suman Datta
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
The present invention is a semiconductor device comprising a carbon nanotube body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the carbon nanotube body and on the laterally opposite sidewalls of the carbon nanotube body. A gate electrode is formed on the gate dielectric on the top surface of the carbon nanotube body and adjacent to the gate dielectric on the laterally opposite sidewalls of the carbon nanotube body.
公开/授权文献
- US07560756B2 Tri-gate devices and methods of fabrication 公开/授权日：2009-07-14
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