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公开(公告)号：US20060228840A1
公开(公告)日：2006-10-12
申请号：US11297084
申请日：2005-12-07
申请人： Robert Chau , Brian Doyle , Jack Kavalieros , Douglas Barlage , Suman Datta , Scott Hareland
发明人： Robert Chau , Brian Doyle , Jack Kavalieros , Douglas Barlage , Suman Datta , Scott Hareland
IPC分类号： H01L21/84
CPC分类号： H01L29/785 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1033 , H01L29/41791 , H01L29/42384 , H01L29/42392 , H01L29/4908 , H01L29/66795 , H01L29/772 , H01L29/7854 , H01L29/78645 , H01L29/78696 , H01L51/0048 , H01L51/0554 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.
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公开(公告)号：US20050199950A1
公开(公告)日：2005-09-15
申请号：US11123565
申请日：2005-05-06
申请人： Robert Chau , Brian Doyle , Jack Kavalieros , Douglas Barlage , Suman Datta , Scott Hareland
发明人： Robert Chau , Brian Doyle , Jack Kavalieros , Douglas Barlage , Suman Datta , Scott Hareland
IPC分类号： H01L21/336 , H01L29/423 , H01L29/786 , H01L29/76 , H01L29/94
CPC分类号： H01L29/785 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1033 , H01L29/41791 , H01L29/42384 , H01L29/42392 , H01L29/4908 , H01L29/66795 , H01L29/772 , H01L29/7854 , H01L29/78645 , H01L29/78696 , H01L51/0048 , H01L51/0554 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.
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公开(公告)号：US20070034972A1
公开(公告)日：2007-02-15
申请号：US11588066
申请日：2006-10-25
申请人： Robert Chau , Brian Doyle , Jack Kavalieros , Douglas Barlage , Suman Datta
发明人： Robert Chau , Brian Doyle , Jack Kavalieros , Douglas Barlage , Suman Datta
IPC分类号： H01L29/76
CPC分类号： H01L29/785 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1033 , H01L29/41791 , H01L29/42384 , H01L29/42392 , H01L29/4908 , H01L29/66795 , H01L29/772 , H01L29/7854 , H01L29/78645 , H01L29/78696 , H01L51/0048 , H01L51/0554 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： The present invention is a semiconductor device comprising a carbon nanotube body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the carbon nanotube body and on the laterally opposite sidewalls of the carbon nanotube body. A gate electrode is formed on the gate dielectric on the top surface of the carbon nanotube body and adjacent to the gate dielectric on the laterally opposite sidewalls of the carbon nanotube body.
摘要翻译： 本发明是一种半导体器件，其包括碳纳米管体，其具有形成在基底上的顶表面和侧向相对的侧壁。 栅极电介质层形成在碳纳米管体的上表面和碳纳米管体的横向相对侧壁上。 栅极电极形成在碳纳米管主体的顶表面上的栅极电介质上并且与碳纳米管体的横向相对的侧壁上的栅电介质相邻。
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公开(公告)号：US20050199949A1
公开(公告)日：2005-09-15
申请号：US10923472
申请日：2004-08-20
申请人： Robert Chau , Brian Dovle , Jack Kavalieros , Douglas Barlage , Suman Datta , Scott Hareland
发明人： Robert Chau , Brian Dovle , Jack Kavalieros , Douglas Barlage , Suman Datta , Scott Hareland
IPC分类号： H01L21/336 , H01L29/423 , H01L29/786 , H01L21/00 , H01L29/76
CPC分类号： H01L29/785 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1033 , H01L29/41791 , H01L29/42384 , H01L29/42392 , H01L29/4908 , H01L29/66795 , H01L29/772 , H01L29/7854 , H01L29/78645 , H01L29/78696 , H01L51/0048 , H01L51/0554 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.
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公开(公告)号：US07427794B2
公开(公告)日：2008-09-23
申请号：US11123565
申请日：2005-05-06
申请人： Robert S. Chau , Brian S. Doyle , Jack Kavalieros , Douglas Barlage , Suman Datta , Scott A. Hareland
发明人： Robert S. Chau , Brian S. Doyle , Jack Kavalieros , Douglas Barlage , Suman Datta , Scott A. Hareland
CPC分类号： H01L29/785 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1033 , H01L29/41791 , H01L29/42384 , H01L29/42392 , H01L29/4908 , H01L29/66795 , H01L29/772 , H01L29/7854 , H01L29/78645 , H01L29/78696 , H01L51/0048 , H01L51/0554 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.
摘要翻译： 本发明是一种半导体器件，其包括半导体本体，其具有形成在衬底上的顶表面和横向相对的侧壁。 栅电介质层形成在半导体本体的顶表面和半导体本体的横向相对的侧壁上。 栅极电极形成在半导体本体的顶表面上的栅电介质上并与半导体本体的横向相对的侧壁上的栅电介质相邻。
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公开(公告)号：US07514346B2
公开(公告)日：2009-04-07
申请号：US11297084
申请日：2005-12-07
申请人： Robert S. Chau , Brian S. Doyle , Jack Kavalieros , Douglas Barlage , Suman Datta , Scott A. Hareland
发明人： Robert S. Chau , Brian S. Doyle , Jack Kavalieros , Douglas Barlage , Suman Datta , Scott A. Hareland
IPC分类号： H01L21/4763
CPC分类号： H01L29/785 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1033 , H01L29/41791 , H01L29/42384 , H01L29/42392 , H01L29/4908 , H01L29/66795 , H01L29/772 , H01L29/7854 , H01L29/78645 , H01L29/78696 , H01L51/0048 , H01L51/0554 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.
摘要翻译： 本发明是一种半导体器件，其包括半导体本体，其具有形成在衬底上的顶表面和横向相对的侧壁。 栅电介质层形成在半导体本体的顶表面和半导体本体的横向相对的侧壁上。 栅极电极形成在半导体本体的顶表面上的栅电介质上并与半导体本体的横向相对的侧壁上的栅电介质相邻。
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公开(公告)号：US07560756B2
公开(公告)日：2009-07-14
申请号：US11588066
申请日：2006-10-25
IPC分类号： H01L29/80 , H01L31/112
CPC分类号： H01L29/785 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1033 , H01L29/41791 , H01L29/42384 , H01L29/42392 , H01L29/4908 , H01L29/66795 , H01L29/772 , H01L29/7854 , H01L29/78645 , H01L29/78696 , H01L51/0048 , H01L51/0554 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： The present invention is a semiconductor device comprising a carbon nanotube body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the carbon nanotube body and on the laterally opposite sidewalls of the carbon nanotube body. A gate electrode is formed on the gate dielectric on the top surface of the carbon nanotube body and adjacent to the gate dielectric on the laterally opposite sidewalls of the carbon nanotube body.
摘要翻译： 本发明是一种半导体器件，其包括碳纳米管体，其具有形成在基底上的顶表面和横向相对的侧壁。 栅极电介质层形成在碳纳米管体的上表面和碳纳米管体的横向相对侧壁上。 栅极电极形成在碳纳米管主体的顶表面上的栅极电介质上并且与碳纳米管体的横向相对的侧壁上的栅电介质相邻。
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公开(公告)号：US07358121B2
公开(公告)日：2008-04-15
申请号：US10227068
申请日：2002-08-23
IPC分类号： H01L21/00
CPC分类号： H01L29/785 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1033 , H01L29/41791 , H01L29/42384 , H01L29/42392 , H01L29/4908 , H01L29/66795 , H01L29/772 , H01L29/7854 , H01L29/78645 , H01L29/78696 , H01L51/0048 , H01L51/0554 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.
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公开(公告)号：US06858478B2
公开(公告)日：2005-02-22
申请号：US10367263
申请日：2003-02-14
申请人： Robert S. Chau , Brian S. Doyle , Jack Kavalieros , Douglas Barlage , Suman Datta , Scott A. Hareland
发明人： Robert S. Chau , Brian S. Doyle , Jack Kavalieros , Douglas Barlage , Suman Datta , Scott A. Hareland
IPC分类号： H01L21/336 , H01L29/423 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L29/785 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1033 , H01L29/41791 , H01L29/42384 , H01L29/42392 , H01L29/4908 , H01L29/66795 , H01L29/772 , H01L29/7854 , H01L29/78645 , H01L29/78696 , H01L51/0048 , H01L51/0554 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.
摘要翻译： 本发明是一种半导体器件，其包括半导体本体，其具有形成在衬底上的顶表面和横向相对的侧壁。 栅电介质层形成在半导体本体的顶表面和半导体本体的横向相对的侧壁上。 栅极电极形成在半导体本体的顶表面上的栅电介质上并与半导体本体的横向相对的侧壁上的栅电介质相邻。
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公开(公告)号：US07504678B2
公开(公告)日：2009-03-17
申请号：US10703316
申请日：2003-11-07
IPC分类号： H01L29/80 , H01L31/112
CPC分类号： H01L29/785 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1033 , H01L29/41791 , H01L29/42384 , H01L29/42392 , H01L29/4908 , H01L29/66795 , H01L29/772 , H01L29/7854 , H01L29/78645 , H01L29/78696 , H01L51/0048 , H01L51/0554 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.
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