发明申请
US20070048981A1 METHOD FOR PROTECTING A SEMICONDUCTOR DEVICE FROM CARBON DEPLETION BASED DAMAGE
审中-公开
用于保护基于碳沉积的损伤的半导体器件的方法
- 专利标题： METHOD FOR PROTECTING A SEMICONDUCTOR DEVICE FROM CARBON DEPLETION BASED DAMAGE
- 专利标题（中）： 用于保护基于碳沉积的损伤的半导体器件的方法
-
申请号： US11162219申请日： 2005-09-01
-
公开(公告)号： US20070048981A1公开(公告)日： 2007-03-01
- 发明人: Griselda Bonilla , Richard Conti , Timothy Dalton , Nicholas Fuller , Kelly Malone , Satyanarayana Nitta , Shom Ponoth
- 申请人： Griselda Bonilla , Richard Conti , Timothy Dalton , Nicholas Fuller , Kelly Malone , Satyanarayana Nitta , Shom Ponoth
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L21/04
- IPC分类号： H01L21/04
摘要：
A method for protecting a semiconductor device from carbon depletion type damage includes enriching an exposed surface of a porous interlevel dielectric material (ILD) with a carbon based material, and implementing a plasma based operation on the porous ILD material. The enriching of the porous ILD material reduces effects of carbon depletion as a result of the plasma based operation.
信息查询
IPC分类:
