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发明申请
US20070056846A1 Silicon dot forming method and silicon dot forming apparatus 审中-公开
硅点形成方法和硅点形成装置

Silicon dot forming method and silicon dot forming apparatus
摘要：
A substrate is accommodated in a vacuum chamber provided with a silicon sputter target, a sputtering gas (typically a hydrogen gas) is supplied into the vacuum chamber, a high-frequency power is applied to the gas to form plasma in the chamber, a bias voltage is applied to the target for control of chemical sputtering, and the chemical sputtering is effected on the target by the plasma to form silicon dots on the substrate.
摘要（中）：

将衬底容纳在设置有硅溅射靶的真空室中，将溅射气体（通常为氢气）供应到真空室中，向气体施加高频电力以在腔室中形成等离子体，偏压 电压施加到靶，用于化学溅射的控制，并且通过等离子体在靶上进行化学溅射，以在衬底上形成硅点。

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