公开(公告)号：US20130023443A1

公开(公告)日：2013-01-24

申请号：US13637815

申请日：2011-03-30

申请人： Mutsunori Shirai ,  Takayuki Ezaki ,  Tsukasa Hayashi ,  Takeshi Ujiiye ,  Makoto Ganaha ,  Shigekazu Yamamoto

发明人： Mutsunori Shirai ,  Takayuki Ezaki ,  Tsukasa Hayashi ,  Takeshi Ujiiye ,  Makoto Ganaha ,  Shigekazu Yamamoto

IPC分类号： C40B30/04 ,  C40B40/06

CPC分类号： G01N33/56933 ,  C12Q1/6816 ,  C12Q1/6865 ,  C12Q1/689 ,  C12Q2600/112 ,  C12Q2600/156 ,  G01N33/56911 ,  G01N33/56916 ,  G01N33/56938 ,  G01N33/56944 ,  Y02A50/451 ,  C12Q2565/137 ,  C12Q2525/143 ,  C12Q2537/125 ,  C12Q2537/143 ,  C12Q2563/149 ,  C12Q2565/625

摘要： Provided are a method and a kit for accurately and rapidly detecting ten types of targeting pneumonia bacteria: Streptococcus pneumoniae, Haemophilus influenzae, Mycoplasma pneumoniae, Chlamydophila pneumoniae, Legionella pneumophila, Klebsiella pneumoniae, Pseudomonas aeruginosa, Moraxella catarrhalis, methicillin-resistant Staphylococcus aureus (MRSA), and Staphylococcus aureus. A set of primer pairs directed to their respective target regions contained in the DnaJ gene, etc., of the ten types of pneumonia causative bacteria is designed for the ten bacterial strains and used to amplify gene products. A set of bacterial strain-specific probe pairs is further designed for the ten bacterial strains such that the probe pairs hybridize with the amplification products via sequences in the respective target regions differing from the sequences hybridized by the set of primer pairs. A first probe-bound labeled high molecular carrier in which plural types of first probes for the pneumonia bacteria are bound to a labeled high molecular carrier and a solid-phase second probe-carrying developing support are used as the set of probe pairs to perform nucleic acid chromatography.

摘要翻译： 提供了用于准确和快速检测十种靶向性肺炎细菌的方法和试剂盒：肺炎链球菌，流感嗜血杆菌，肺炎支原体，肺炎衣原体，嗜肺军团菌，肺炎克雷伯菌，铜绿假单胞菌，卡他莫拉菌，耐甲氧西林金黄色葡萄球菌（MRSA） ）和金黄色葡萄球菌（Staphylococcus aureus）。 针对十种类型肺炎致病细菌的DnaJ基因等中包含的各自靶区域的一组引物对设计用于十种细菌菌株并用于扩增基因产物。 针对10个细菌菌株进一步设计了一组细菌菌株特异性探针对，使得探针对通过与由该组引物对杂交的序列不同的各个靶区域中的序列与扩增产物进行杂交。 使用第一探针结合标记的高分子载体，其中用于肺炎细菌的多种类型的第一探针与标记的高分子载体结合，并且使用固相第二探针携带的显影载体作为探针对的一组以进行核酸 酸性色谱。

公开(公告)号：US07887677B2

公开(公告)日：2011-02-15

申请号：US11524207

申请日：2006-09-21

申请人： Takashi Mikami ,  Atsushi Tomyo ,  Kenji Kato ,  Eiji Takahashi ,  Tsukasa Hayashi

发明人： Takashi Mikami ,  Atsushi Tomyo ,  Kenji Kato ,  Eiji Takahashi ,  Tsukasa Hayashi

IPC分类号： C23C14/34

CPC分类号： C23C14/3457 ,  C23C14/228 ,  C23C14/3464 ,  H01J37/32357 ,  H01J37/32972 ,  H01J37/34

摘要： A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.

摘要翻译： 硅物体形成目标衬底被布置在第一腔室中，硅溅射靶设置在与第一腔室连通的第二室中，用于化学溅射的等离子体由第二腔室中的氢气形成，化学溅射 由此形成等离子体的硅溅射靶，产生有助于硅物体形成的颗粒，由此在从第二室移动到第一室的颗粒的基底上形成硅物体。

公开(公告)号：US20070063183A1

公开(公告)日：2007-03-22

申请号：US11523039

申请日：2006-09-19

申请人： Kenji Kato ,  Atsushi Tomyo ,  Eiji Takahashi ,  Takashi Mikami ,  Tsukasa Hayashi

发明人： Kenji Kato ,  Atsushi Tomyo ,  Eiji Takahashi ,  Takashi Mikami ,  Tsukasa Hayashi

IPC分类号： H01L31/00 ,  H01L29/06

CPC分类号： H01L29/127 ,  B82Y10/00 ,  B82Y30/00 ,  C23C14/0057 ,  C23C14/165 ,  C23C14/54 ,  C23C14/564 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02601

摘要： A substrate having silicon dots wherein at least one insulating layer and at least one group of silicon dots are formed on a substrate selected from a non-alkali glass substrate and a substrate made of a polymer material.

摘要翻译： 具有硅点的基板，其中在选自无碱玻璃基板和由聚合物材料制成的基板的基板上形成至少一个绝缘层和至少一组硅点。

公开(公告)号：US20070056846A1

公开(公告)日：2007-03-15

申请号：US11519967

申请日：2006-09-13

申请人： Eiji Takahashi ,  Atsushi Tomyo ,  Kenji Kato ,  Takashi Mikami ,  Tsukasa Hayashi

发明人： Eiji Takahashi ,  Atsushi Tomyo ,  Kenji Kato ,  Takashi Mikami ,  Tsukasa Hayashi

IPC分类号： C23C14/00

CPC分类号： C23C14/3457 ,  C23C14/14 ,  C23C14/3414 ,  C23C14/3471 ,  C23C14/544 ,  H01J37/32009 ,  H01J37/32532

摘要： A substrate is accommodated in a vacuum chamber provided with a silicon sputter target, a sputtering gas (typically a hydrogen gas) is supplied into the vacuum chamber, a high-frequency power is applied to the gas to form plasma in the chamber, a bias voltage is applied to the target for control of chemical sputtering, and the chemical sputtering is effected on the target by the plasma to form silicon dots on the substrate.

摘要翻译： 将衬底容纳在设置有硅溅射靶的真空室中，将溅射气体（通常为氢气）供应到真空室中，向气体施加高频电力以在腔室中形成等离子体，偏压 电压施加到靶，用于化学溅射的控制，并且通过等离子体在靶上进行化学溅射，以在衬底上形成硅点。

公开(公告)号：US20070007123A1

公开(公告)日：2007-01-11

申请号：US11519154

申请日：2006-09-12

申请人： Eiji Takahashi ,  Takashi Mikami ,  Shigeaki Kishida ,  Kenji Kato ,  Atsushi Tomyo ,  Tsukasa Hayashi ,  Kiyoshi Ogata

发明人： Eiji Takahashi ,  Takashi Mikami ,  Shigeaki Kishida ,  Kenji Kato ,  Atsushi Tomyo ,  Tsukasa Hayashi ,  Kiyoshi Ogata

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02631

摘要： There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).

摘要翻译： 提供了形成具有基本上均匀的粒径并且在低温下直接在基底上表现出基本均匀的密度分布的硅点的方法和装置。 将氢气（或氢气和含硅烷气体）供给到设置有硅溅射靶（例如，靶30）的真空室（1）中，或者将氢气和含硅烷的气体供应到 在不将硅溅射靶设置在其中的腔室（1）中，向气体施加高频功率，从而产生等离子体，使得发射强度Si（（（nm）/ Hbeta） 288nm波长的硅原子和等离子体发射波长为484nm的氢原子的发光强度Hbeta为10.0以下，优选为3.0以下，0.5以下，硅点（SiD ），在500度的低温下直接在基板（S）上形成粒径为20nm以下或10nm以下的粒径。 在等离子体中（如果存在硅溅射靶，则具有化学溅射）。

公开(公告)号：US08406972B2

公开(公告)日：2013-03-26

申请号：US12865158

申请日：2009-01-26

申请人： Naohiro Yamada ,  Tsukasa Hayashi

发明人： Naohiro Yamada ,  Tsukasa Hayashi

IPC分类号： G06F7/00 ,  G06F17/00 ,  G06F19/00 ,  H02P17/00 ,  B60W10/04 ,  B60W10/10

CPC分类号： F16H59/44 ,  F16H61/0213 ,  Y10T477/33 ,  Y10T477/60

摘要： When a read-ahead vehicle speed is calculated using an integrator and a delay element, a predetermined gain used for an integral calculation is made small if a result of the integral calculation greater than a predetermined value based on an actual vehicle speed.

摘要翻译： 当使用积分器和延迟元件计算预读车速时，如果积分计算的结果基于实际车速大于预定值，则用于积分计算的预定增益变小。

公开(公告)号：US20080035471A1

公开(公告)日：2008-02-14

申请号：US11524207

申请日：2006-09-21

申请人： Takashi Mikami ,  Atsushi Tomyo ,  Kenji Kato ,  Eiji Takahashi ,  Tsukasa Hayashi

发明人： Takashi Mikami ,  Atsushi Tomyo ,  Kenji Kato ,  Eiji Takahashi ,  Tsukasa Hayashi

IPC分类号： C23C14/00

CPC分类号： C23C14/3457 ,  C23C14/228 ,  C23C14/3464 ,  H01J37/32357 ,  H01J37/32972 ,  H01J37/34

摘要： A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.

摘要翻译： 硅物体形成目标衬底被布置在第一腔室中，硅溅射靶设置在与第一腔室连通的第二室中，用于化学溅射的等离子体由第二腔室中的氢气形成，化学溅射 由此形成等离子体的硅溅射靶，产生有助于硅物体形成的颗粒，由此在从第二室移动到第一室的颗粒的基底上形成硅物体。

公开(公告)号：US5122483A

公开(公告)日：1992-06-16

申请号：US634528

申请日：1990-12-27

申请人： Shigeki Sakai ,  Kiyoshi Ogata ,  Tsukasa Hayashi

发明人： Shigeki Sakai ,  Kiyoshi Ogata ,  Tsukasa Hayashi

IPC分类号： C23C14/10 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/822 ,  H01L27/04

CPC分类号： H01L21/02164 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/318 ,  H01L21/3185

摘要： A method of forming a highly insulative silicon oxide thin film including the steps of providing a substrate, depositing silicon on the substrate, and injecting an ion beam of oxygen or a mixed gas consisting of oxygen and an inert gas simultaneously or alternately with the depositing of the silicon. Silicon oxide may be deposited on the substrate in combination with the injection of ions of an inert gas. Other metals made be deposited along with the injection of oxygen or nitrogen cations.

摘要翻译： 一种形成高绝缘性氧化硅薄膜的方法，包括以下步骤：提供衬底，在衬底上沉积硅，以及同时或交替地将氧离子束或由氧气和惰性气体组成的混合气体注入到离子束 硅。 氧化硅可以与注入惰性气体的离子一起沉积在衬底上。 制造的其他金属与氧或氮阳离子的注入一起沉积。

公开(公告)号：US08321099B2

公开(公告)日：2012-11-27

申请号：US12865160

申请日：2009-01-26

申请人： Naohiro Yamada ,  Tsukasa Hayashi

发明人： Naohiro Yamada ,  Tsukasa Hayashi

IPC分类号： G06F7/00 ,  G06F17/00 ,  G06F19/00 ,  F16H61/40

CPC分类号： F16H61/0213 ,  F16H59/18 ,  F16H59/44 ,  F16H61/68 ,  Y10T477/636

摘要： When an accelerator pedal opening angle is large, a target vehicle speed is calculated using a read-ahead vehicle speed and, when the accelerator pedal opening angle is small, the target gear shift ratio is calculated using an actual vehicle speed.

摘要翻译： 当加速器踏板开度大时，使用预读车速计算目标车速，并且当加速器踏板开度小时，使用实际车速来计算目标变速比。

公开(公告)号：US07988835B2

公开(公告)日：2011-08-02

申请号：US11519154

申请日：2006-09-12

申请人： Eiji Takahashi ,  Takashi Mikami ,  Shigeaki Kishida ,  Kenji Kato ,  Atsushi Tomyo ,  Tsukasa Hayashi ,  Kiyoshi Ogata ,  Yuichi Setsuhara

发明人： Eiji Takahashi ,  Takashi Mikami ,  Shigeaki Kishida ,  Kenji Kato ,  Atsushi Tomyo ,  Tsukasa Hayashi ,  Kiyoshi Ogata ,  Yuichi Setsuhara

IPC分类号： C23C14/00 ,  C23C14/32 ,  C23C16/00 ,  C23C16/50

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02631

摘要： There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).

摘要翻译： 提供了形成具有基本上均匀的粒径并且在低温下直接在基底上表现出基本均匀的密度分布的硅点的方法和装置。 将氢气（或氢气和含硅烷气体）供给到设置有硅溅射靶（例如，靶30）的真空室（1）中，或者将氢气和含硅烷的气体供应到 在不将硅溅射靶设置在其中的腔室（1）中，向气体施加高频功率，从而产生等离子体，使得发射强度Si（288nm）的比率（Si（288nm）/ H＆bgr）） （288nm）的波长288nm的硅原子和发光强度H＆bgr; 的等离子体发射波长为484nm的氢原子为10.0以下，优选为3.0以下，或0.5以下，形成粒径为20nm以下或10nm以下的硅点（SiD） 在500度的低温下直接在基板（S）上。 在等离子体中（如果存在硅溅射靶，则具有化学溅射）。