发明申请
- 专利标题: Method for manufacturing substrate with cavity
- 专利标题(中): 用腔体制造衬底的方法
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申请号: US11524403申请日: 2006-09-21
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公开(公告)号: US20070065988A1公开(公告)日: 2007-03-22
- 发明人: Hoe-Ku Jung , Myung-Sam Kang , Jung-Hyun Park
- 申请人: Hoe-Ku Jung , Myung-Sam Kang , Jung-Hyun Park
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2005-0088091 20050922
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method for manufacturing a substrate having a cavity is disclosed. The method comprises: (a) forming a first circuit patter on both sides of a seed layer by use of a first dry film, the seed layer being for forming a circuit pattern on both sides; (b) laminating a second dry film on the first dry film on both sides of the seed layer, the thickness of the second dry film corresponding to the depth of the cavity to be formed; (c) laminating a dielectric layer on an area outside of where the cavity is to be formed on both sides of the seed layer, the thickness of the dielectric layer corresponding to the depth of the cavity to be formed; (d) laminating on the seed layer a copper foil laminated master having a second circuit pattern; and (e) forming the cavity by peeling off the first dry film and the second dry film after removing the seed layer. The method for manufacturing a substrate with a cavity in accordance with the present invention can improve the efficiency of a substrate manufacturing process by using both sides of a seed layer to manufacture the substrate with a cavity.
公开/授权文献
- US07562446B2 Method for manufacturing substrate with cavity 公开/授权日:2009-07-21
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