发明申请
- 专利标题： CONFORMAL DOPING APPARATUS AND METHOD
- 专利标题（中）： 一致的装置和方法
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申请号： US11163307申请日： 2005-10-13
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公开(公告)号： US20070087574A1公开(公告)日： 2007-04-19
- 发明人: Atul Gupta , Vikram Singh , Timothy Miller , Edmund Winder
- 申请人： Atul Gupta , Vikram Singh , Timothy Miller , Edmund Winder
- 申请人地址： US MA Gloucester
- 专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址： US MA Gloucester
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469 ; B05C11/00
摘要：
A method of doping includes depositing a layer of dopant material on nonplanar and planar features of a substrate. Inert ions are generated from an inert feed gas. The inert ions are extracted towards the substrate where they physically knock the dopant material into both the planar and nonplanar features of the substrate.
公开/授权文献
- US07524743B2 Conformal doping apparatus and method 公开/授权日：2009-04-28
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