发明申请
- 专利标题: Method for producing semiconductor crystal
- 专利标题(中): 半导体晶体的制造方法
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申请号: US11590930申请日: 2006-11-01
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公开(公告)号: US20070101931A1公开(公告)日: 2007-05-10
- 发明人: Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
- 申请人: Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
- 申请人地址: JP Aichi-ken JP Aichi-ken JP Suita-shi
- 专利权人: TOYODA GOSEI CO., LTD.,NGK INSULATORS, LTD.,OSAKA UNIVERSITY
- 当前专利权人: TOYODA GOSEI CO., LTD.,NGK INSULATORS, LTD.,OSAKA UNIVERSITY
- 当前专利权人地址: JP Aichi-ken JP Aichi-ken JP Suita-shi
- 优先权: JP2005-319019 20051102; JP2006-75223 20060317
- 主分类号: C30B23/00
- IPC分类号: C30B23/00 ; C30B25/00 ; C30B28/12 ; C30B28/14
摘要:
The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.
公开/授权文献
- US07459023B2 Method for producing semiconductor crystal 公开/授权日:2008-12-02