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公开(公告)号：US07459023B2
公开(公告)日：2008-12-02
申请号：US11590930
申请日：2006-11-01
申请人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
发明人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
IPC分类号： C30B25/12
CPC分类号： C30B25/00 , C30B9/00 , C30B29/403 , C30B29/406
摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.
摘要翻译： 本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。 待生长半导体晶体的基板的至少一部分由助熔剂材料形成。 半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。 或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。 助熔剂材料由硅形成。 或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。
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公开(公告)号：US20070101931A1
公开(公告)日：2007-05-10
申请号：US11590930
申请日：2006-11-01
申请人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
发明人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
CPC分类号： C30B25/00 , C30B9/00 , C30B29/403 , C30B29/406
摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.
摘要翻译： 本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。 待生长半导体晶体的基板的至少一部分由助熔剂材料形成。 半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。 或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。 助熔剂材料由硅形成。 或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。
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公开(公告)号：US10544425B2
公开(公告)日：2020-01-28
申请号：US13976526
申请日：2011-12-26
申请人： Hiroshi Kato , Hideo Maeda , Yoshihiro Sunohara , Ikuo Ando , Masahiro Oshima , Motoshige Kawata , Hitoshi Yoshida , Sakiko Hirose , Makiko Kawagishi , Yojiro Taniguchi , Kazumasa Murata , Hiroaki Maeda , Yuji Yamada , Keisuke Sekino , Akihiko Yamazaki
发明人： Hiroshi Kato , Hideo Maeda , Yoshihiro Sunohara , Ikuo Ando , Masahiro Oshima , Motoshige Kawata , Hitoshi Yoshida , Sakiko Hirose , Makiko Kawagishi , Yojiro Taniguchi , Kazumasa Murata , Hiroaki Maeda , Yuji Yamada , Keisuke Sekino , Akihiko Yamazaki
IPC分类号： C12N15/82 , C12Q1/6895
摘要： By a QTL analysis and so forth using 4-HPPD inhibitor-susceptible rice and 4-HPPD inhibitor-resistant rice, a hypothetical gene (HIS1 gene) of an iron/ascorbate-dependent oxidoreductase gene located on a short arm of chromosome 2 of rice has been identified as a 4-HPPD inhibitor-resistance gene. Further, it has also been revealed that a homologous gene (HSL1 gene) of the HIS1 gene is located on chromosome 6 of rice. Furthermore, it has been found out that utilizations of these genes make it possible to efficiently produce a plant having increased resistance or susceptibility to a 4-HPPD inhibitor and to efficiently determine whether a plant has resistance or susceptibility to a 4-HPPD inhibitor.
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公开(公告)号：US08814271B2
公开(公告)日：2014-08-26
申请号：US13699545
申请日：2010-08-05
申请人： Manabu Ishimoto , Yuji Yamada , Keisuke Ishizaki
发明人： Manabu Ishimoto , Yuji Yamada , Keisuke Ishizaki
摘要： A headrest with a function of a dynamic damper that damps vibrations of a vehicle seat, and provide the headrest with an impact absorbing function with respect to a head portion of a seated vehicle occupant. A stay of a headrest is held at a seat back, and a cover, that covers at least a portion of the stay, is supported at the stay so as to be swingable in a seat front-rear direction around a seat transverse direction. Due to a torsion coil spring (an elastic member) elastically deforming when the cover swings, restoring force in a direction opposing a swinging direction of the cover is generated. Further, displacement other than in the swinging direction is suppressed by a suppressing portion that is provided between the stay and the cover.
摘要翻译： 具有动力阻尼器的功能的头枕，其抑制车辆座椅的振动，并且使头枕相对于坐着的乘客的头部提供冲击吸收功能。 头枕的停留被保持在座椅靠背处，并且覆盖至少一部分支架的盖子被支撑在支撑件处，以便能够围绕座椅横向方向在座椅前后方向上摆动。 由于当盖摆动时扭转螺旋弹簧（弹性构件）弹性变形，产生与盖的摆动方向相反的方向的恢复力。 此外，通过设置在支架和盖之间的抑制部分来抑制除了摆动方向之外的位移。
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公开(公告)号：US20130127222A1
公开(公告)日：2013-05-23
申请号：US13699545
申请日：2010-08-05
申请人： Manabu Ishimoto , Yuji Yamada , Keisuke Ishizaki
发明人： Manabu Ishimoto , Yuji Yamada , Keisuke Ishizaki
IPC分类号： B60N2/48
摘要： A headrest with a function of a dynamic damper that damps vibrations of a vehicle seat, and provide the headrest with an impact absorbing function with respect to a head portion of a seated vehicle occupant. A stay of a headrest is held at a seat back, and a cover, that covers at least a portion of the stay, is supported at the stay so as to be swingable in a seat front-rear direction around a seat transverse direction. Due to a torsion coil spring (an elastic member) elastically deforming when the cover swings, restoring force in a direction opposing a swinging direction of the cover is generated. Further, displacement other than in the swinging direction is suppressed by a suppressing portion that is provided between the stay and the cover.
摘要翻译： 具有动力阻尼器的功能的头枕，其抑制车辆座椅的振动，并且使头枕相对于坐着的乘客的头部提供冲击吸收功能。 头枕的停留被保持在座椅靠背处，并且覆盖至少一部分支架的盖子被支撑在支撑件处，以便能够围绕座椅横向方向在座椅前后方向上摆动。 由于当盖摆动时扭转螺旋弹簧（弹性构件）弹性变形，产生与盖的摆动方向相反的方向的恢复力。 此外，通过设置在支架和盖之间的抑制部分来抑制除了摆动方向之外的位移。
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6.发明授权Audio signal processing for separating multiple source signals from at least one source signal 失效用于将多个源信号与至少一个源信号分离的音频信号处理公开(公告)号：US08442241B2
公开(公告)日：2013-05-14
申请号：US11665688
申请日：2005-10-04
申请人： Yuji Yamada , Koyuru Okimoto
发明人： Yuji Yamada , Koyuru Okimoto
IPC分类号： H03G5/00
CPC分类号： H04R3/04 , G10L19/008 , H04S3/00
摘要： An audio signal processing device is provided whereby, from two systems of audio signals in which audio signals of multiple audio sources are included, the audio signals of the multiple audio sources can be suitably separated. The audio signal processing device divides each of two systems of audio signals into a plurality of frequency bands, calculates a level ratio or a level difference of the two systems of audio signals, at each of the divided plurality of frequency bands, and extracts and outputs frequency band components of and nearby values regarding which the level ratio or the level difference calculated at the level comparison means have been determined beforehand. The frequency band components have a level ratio or level difference at and nearby the values determined beforehand which are different one from another.
摘要翻译： 提供了一种音频信号处理装置，其中，从包括多个音频源的音频信号的两个音频信号系统中可以适当地分离多个音频源的音频信号。 音频信号处理装置将两个音频信号系统中的每一个分成多个频带，在每个分割的多个频带中计算两个音频信号系统的电平比或电平差，并且提取和输出 预先确定了在电平比较装置处计算的电平比或电平差的频带分量和附近值。 频带分量在预先确定的和彼此不同的值附近具有电平比或电平差。
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7.发明授权公开(公告)号：US08290180B2
公开(公告)日：2012-10-16
申请号：US12229015
申请日：2008-08-19
申请人： Yuji Yamada , Koyuru Okimoto
发明人： Yuji Yamada , Koyuru Okimoto
摘要： A signal processing device includes a bass signal extractor, a harmonic wave generator, a level detector, and an adjustment controller. The bass signal extractor first extracts a bass signal from an input audio signal. Natural-sounding bass enhancement is achieved as a result of the adjustment controller boosting the bass signal level until the level detector detects the bass signal level at a set level. For input bass signal levels higher than the set level, bass is enhanced virtually using a harmonic signal generated from the bass signal by the harmonic wave generator. As a result, the disadvantages of the boost method and the virtual signal enhancement method are mutually compensated for, and synergistic advantages for bass enhancement are obtained.
摘要翻译： 信号处理装置包括低音信号提取器，谐波发生器，电平检测器和调节控制器。 低音信号提取器首先从输入音频信号中提取低音信号。 由于调节控制器提升低音信号电平，直到电平检测器检测到低音信号电平达到设定电平，才能实现自然的低音增强。 对于高于设定电平的输入低音信号电平，低音通过谐波发生器实际使用由低音信号产生的谐波信号进行增强。 结果，增强方法和虚拟信号增强方法的缺点被相互补偿，并且获得了对低音增强的协同优点。
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公开(公告)号：US20120157201A1
公开(公告)日：2012-06-21
申请号：US13382041
申请日：2010-03-15
IPC分类号： A63F13/00
CPC分类号： A63F13/577 , A63F13/10 , A63F13/211 , A63F13/213 , A63F13/28 , A63F13/42 , A63F2300/105 , A63F2300/1093 , A63F2300/6045 , A63F2300/643 , G06F3/017 , G06F3/0346
摘要： A frame image acquiring unit acquires a captured image of an input device that is provided with an illuminator. A device information deriving unit derives position information of the input device from the captured image. An input receiving unit acquires attitude information of the input device. An operation object control unit controls the motion of an operation object in accordance with the position information and the attitude information of the input device. A non-operation object control unit controls the motion of a non-operation object. A collision control unit determines the motion of at least one of the operation object and the non-operation object in accordance with a collision mode for the collision between the operation object and the non-operation object.
摘要翻译： 帧图像获取单元获取具有照明器的输入装置的拍摄图像。 设备信息导出单元从捕获的图像中导出输入设备的位置信息。 输入接收单元获取输入设备的姿态信息。 操作对象控制单元根据输入装置的位置信息和姿态信息来控制操作对象的运动。 非操作对象控制单元控制非操作对象的运动。 冲突控制单元根据用于操作对象和非操作对象之间的冲突的冲突模式来确定操作对象和非操作对象中的至少一个的运动。
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公开(公告)号：US07914652B2
公开(公告)日：2011-03-29
申请号：US11941277
申请日：2007-11-16
申请人： Yuji Yamada , Yuki Izawa , Yoshinori Nishiki
发明人： Yuji Yamada , Yuki Izawa , Yoshinori Nishiki
IPC分类号： C25B11/03
CPC分类号： C25B11/035 , C25B11/0494 , C25B11/12
摘要： The present invention provides an oxygen gas diffusion cathode for sodium chloride electrolysis comprising: a porous conductive substrate comprising silver, a hydrophobic material and a carbon material; a catalyst comprising silver and palladium, coated on the porous conductive substrate.
摘要翻译： 本发明提供一种用于氯化钠电解的氧气扩散阴极，包括：包含银，疏水材料和碳材料的多孔导电基材; 包含银和钯的催化剂，涂覆在多孔导电基材上。
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10.发明授权Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process 有权半导体衬底清洗液和半导体衬底清洗工艺公开(公告)号：US07896970B2
公开(公告)日：2011-03-01
申请号：US11893752
申请日：2007-08-16
申请人： Hiroshi Tomita , Yuji Yamada , Hiroaki Yamada , Norio Ishikawa , Yumiko Abe
发明人： Hiroshi Tomita , Yuji Yamada , Hiroaki Yamada , Norio Ishikawa , Yumiko Abe
IPC分类号： H01L21/02
CPC分类号： H01L21/02052 , C11D7/08 , C11D7/34 , C11D7/36 , C11D11/0047
摘要： A semiconductor substrate cleaning liquid composition is provided that includes one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound; an inorganic acid; and water. There is also provided a process for cleaning a semiconductor substrate that includes a first step of cleaning the semiconductor substrate using the semiconductor substrate cleaning liquid composition and, subsequent to the first step, a second step of cleaning the semiconductor substrate with pure water, ozone water formed by dissolving ozone gas in pure water, or aqueous hydrogen peroxide.
摘要翻译： 提供一种半导体衬底清洗液组合物，其包含一种或多种选自每分子具有至少两个磺酸基的化合物，植酸和缩合磷酸化合物的类型; 无机酸; 和水。 还提供了一种清洗半导体衬底的方法，该方法包括使用半导体衬底清洗液组合物清洗半导体衬底的第一步骤，在第一步骤之后，用纯水，臭氧水清洗半导体衬底的第二步骤 通过将臭氧气体溶解在纯水或过氧化氢水溶液中形成。
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