Method of fabricating a microelectronic device using electron beam treatment to induce stress

Invention Application

US20070105368A1 Method of fabricating a microelectronic device using electron beam treatment to induce stress 审中-公开

Title translation: 使用电子束处理制造微电子器件以诱导应力的方法

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Patent Title: Method of fabricating a microelectronic device using electron beam treatment to induce stress
Patent Title (中): 使用电子束处理制造微电子器件以诱导应力的方法
Application No.: US11268036

Application Date: 2005-11-07
Publication No.: US20070105368A1

Publication Date: 2007-05-10
Inventor: Ting Tsui , Andrew McKerrow , Haowen Bu , Robert Kraft
Applicant: Ting Tsui , Andrew McKerrow , Haowen Bu , Robert Kraft
Applicant Address: US TX Dallas
Assignee: Texas Instruments Inc.
Current Assignee: Texas Instruments Inc.
Current Assignee Address: US TX Dallas
Main IPC: H01L21/469
IPC: H01L21/469

Method of fabricating a microelectronic device using electron beam treatment to induce stress

Abstract:

The present invention, in one embodiment, provides a method of fabricating a microelectronics device 200. This embodiment comprises forming a liner 310 over a substrate 210 and a gate structure 230, subjecting the liner 310 to an electron beam 405 and depositing a pre-metal dielectric layer 415 over the liner 310.

Abstract(Chinese):

本发明在一个实施例中提供了一种制造微电子器件200的方法。该实施例包括在衬底210和栅极结构230上形成衬垫310，使衬垫310经受电子束405并在衬垫310上沉积预金属介电层415。

Public/Granted literature

US2177133A Measuring instrument Public/Granted day:1939-10-24

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理