发明申请
- 专利标题： LDMOS with independently biased source
- 专利标题（中）： LDMOS具有独立偏置源
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申请号： US11273222申请日： 2005-11-12
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公开(公告)号： US20070108517A1公开(公告)日： 2007-05-17
- 发明人: You-Kuo Wu , Fu-Hsin Chen , P.Y. Chiang , An-Min Chiang
- 申请人： You-Kuo Wu , Fu-Hsin Chen , P.Y. Chiang , An-Min Chiang
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A power metal-oxide semiconductor device provides an P-type base region that includes the N+ device source and is biased differently than the P-type substrate by application of an electrical load. In one embodiment, an LDMOS device with a NPN configuration is used but the coupling of the device source to the base contact prevents the NPN parasitic device from operating. The P-type base is formed in an N-well that separates the base from the P-type substrate and surrounding P-wells. Vertical punch-through is prevented by a high-impurity N+ buried layer that separates the N-well from the P-type substrate.
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