发明申请
- 专利标题： FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROSTRUCTURES AND DEVICES BY METALORGANIC CHEMICAL VAPOR DEPOSITION
- 专利标题（中）： 通过金属化学气相沉积制备非金属氮化物薄膜，异质结构和器件
-
申请号： US11621479申请日： 2007-01-09
-
公开(公告)号： US20070111488A1公开(公告)日： 2007-05-17
- 发明人: Arpan Chakraborty , Benjamin Haskell , Stacia Keller , James Speck , Steven DenBaars , Shuji Nakamura , Umesh Mishra
- 申请人： Arpan Chakraborty , Benjamin Haskell , Stacia Keller , James Speck , Steven DenBaars , Shuji Nakamura , Umesh Mishra
- 申请人地址： US CA Oakland 94607
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland 94607
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
公开/授权文献
信息查询
IPC分类:
