发明申请
- 专利标题： TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE
- 专利标题（中）： 平面半极性氮化镓生长的技术
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申请号： US11621482申请日： 2007-01-09
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公开(公告)号： US20070111531A1公开(公告)日： 2007-05-17
- 发明人: Troy Baker , Benjamin Haskell , Paul Fini , Steven DenBaars , James Speck , Shuji Nakamura
- 申请人： Troy Baker , Benjamin Haskell , Paul Fini , Steven DenBaars , James Speck , Shuji Nakamura
- 申请人地址： US CA Oakland 94607
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland 94607
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate