发明申请
US20070114463A1 Charged particle beam exposure method of character projection system, charged particle beam exposure device of character projection system, program for use in charged particle beam exposure device, and manufacturing method of semiconductor device
失效
字符投影系统的带电粒子束曝光方法，字符投影系统的带电粒子束曝光装置，带电粒子束曝光装置中的使用程序和半导体装置的制造方法
- 专利标题： Charged particle beam exposure method of character projection system, charged particle beam exposure device of character projection system, program for use in charged particle beam exposure device, and manufacturing method of semiconductor device
- 专利标题（中）： 字符投影系统的带电粒子束曝光方法，字符投影系统的带电粒子束曝光装置，带电粒子束曝光装置中的使用程序和半导体装置的制造方法
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申请号： US11583114申请日： 2006-10-19
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公开(公告)号： US20070114463A1公开(公告)日： 2007-05-24
- 发明人: Tetsuro Nakasugi , Ryoichi Inanami , Takumi Ota , Takeshi Koshiba
- 申请人： Tetsuro Nakasugi , Ryoichi Inanami , Takumi Ota , Takeshi Koshiba
- 优先权： JP2005-307656 20051021
- 主分类号： G21K5/10
- IPC分类号： G21K5/10
摘要：
A charged particle beam exposure method is disclosed, which includes preparing an aperture mask having character apertures, correcting dimensions of designed patterns in design data in consideration of at least one of factors such as a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask, and the like, allocating at least a part of a specified character aperture of the plurality of character apertures of the aperture mask to the corrected designed patterns to produce writing data, and exposing the resist to the beams of the charged particle passed through the at least a part of the specified character aperture based on the writing data.
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