发明申请
- 专利标题: Method for dicing semiconductor wafers
- 专利标题(中): 切割半导体晶片的方法
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申请号: US11655008申请日: 2007-01-18
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公开(公告)号: US20070117352A1公开(公告)日: 2007-05-24
- 发明人: Hsin-Hui Lee , Chien-Chao Huang , Chao-Hsiung Wang , Fu-Liang Yang , Chenming Hu
- 申请人: Hsin-Hui Lee , Chien-Chao Huang , Chao-Hsiung Wang , Fu-Liang Yang , Chenming Hu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method provides for dicing a wafer having a base material with a diamond structure. The wafer first undergoes a polishing process, in which a predetermined portion of the wafer is polished away from its back side. The wafer is then diced through at least one line along a direction at a predetermined offset angle from a natural cleavage direction of the diamond structure. A wafer is produced with one or more dies formed thereon with at least one of its edges at an offset angle from a natural cleavage direction of a diamond structure of a base material forming the wafer. At least one dicing line has one or more protection elements for protecting the dies from undesired cracking while the wafer is being diced along the dicing line.
公开/授权文献
- US08288842B2 Method for dicing semiconductor wafers 公开/授权日:2012-10-16
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