发明申请
- 专利标题： Semiconductor device and semiconductor device production system
- 专利标题（中）： 半导体器件和半导体器件生产系统
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申请号： US11698864申请日： 2007-01-29
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公开(公告)号： US20070120127A1公开(公告)日： 2007-05-31
- 发明人: Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
- 申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
- 申请人地址： JP Atsugi-shi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2001-399004 20011228; JP2001-401472 20011228
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/04 ; H01L29/06
摘要：
It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.
公开/授权文献
- US07538350B2 Semiconductor thin film device 公开/授权日：2009-05-26