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发明申请
US20070120580A1 Non-volatile memory devices and methods of fabricating the same 有权
非易失性存储器件及其制造方法

Non-volatile memory devices and methods of fabricating the same
摘要：
A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.
摘要（中）：

存储器件可以包括与开关器件耦合的开关器件和存储节点。 存储节点可以包括第一电极，第二电极，数据存储层和至少一个接触层。 数据存储层可以设置在第一电极和第二电极之间，并且可以包括过渡金属氧化物或氧化铝。 至少一个接触层可以设置在数据存储层的上方或下方的至少一个上，并且可以包括导电金属氧化物。

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