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    Method of fabricating a resistance based memory device and the memory device
    2.
    发明授权
    Method of fabricating a resistance based memory device and the memory device 有权
    制造基于电阻的存储器件和存储器件的方法

    公开(公告)号：US08207068B2

    公开(公告)日：2012-06-26

    申请号：US12654395

    申请日：2009-12-18

    申请人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

    发明人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

    IPC分类号： H01L21/26

    CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

    摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

    摘要翻译： 示例性实施例涉及制造存储器件和存储器件的方法。 制造存储器件的方法包括在下部结构上形成下部电极和氧化物层，并在氧化物层的区域上辐射能量束。 存储器件包括下部结构和形成在下部结构上的下部结构的氧化物层和下部结构，所述氧化物层包括电子束辐射区域，所述电子束辐射区域接收来自电子束源的辐射，从而产生通过氧化物层的人为形成的电流路径到 下电极。 可以减小并稳定存储器件的复位电流。

    Method of fabricating a resistance based memory device and the memory device
    5.
    发明授权
    Method of fabricating a resistance based memory device and the memory device 有权
    制造基于电阻的存储器件和存储器件的方法

    公开(公告)号：US07659566B2

    公开(公告)日：2010-02-09

    申请号：US11501880

    申请日：2006-08-10

    申请人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

    发明人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

    IPC分类号： H01L27/108

    CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

    摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

    摘要翻译： 示例性实施例涉及制造存储器件和存储器件的方法。 制造存储器件的方法包括在下部结构上形成下部电极和氧化物层，并在氧化物层的区域上辐射能量束。 存储器件包括下部结构和形成在下部结构上的下部结构的氧化物层和下部结构，所述氧化物层包括电子束辐射区域，所述电子束辐射区域接收来自电子束源的辐射，从而产生通过氧化物层的人为形成的电流路径 下电极。 可以减小并稳定存储器件的复位电流。

    Method of fabricating a resistance based memory device and the memory device
    6.
    发明申请
    Method of fabricating a resistance based memory device and the memory device 有权
    制造基于电阻的存储器件和存储器件的方法

    公开(公告)号：US20070037351A1

    公开(公告)日：2007-02-15

    申请号：US11501880

    申请日：2006-08-10

    申请人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

    发明人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

    IPC分类号： H01L21/336

    CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

    摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

    摘要翻译： 示例性实施例涉及制造存储器件和存储器件的方法。 制造存储器件的方法包括在下部结构上形成下部电极和氧化物层，并在氧化物层的区域上辐射能量束。 存储器件包括下部结构和形成在下部结构上的下部结构的氧化物层和下部结构，所述氧化物层包括电子束辐射区域，所述电子束辐射区域接收来自电子束源的辐射，从而产生通过氧化物层的人为形成的电流路径到 下电极。 可以减小并稳定存储器件的复位电流。

    Lithography apparatus and pattern forming method using the same having an liquid crystal panel for a photo mask function
    7.
    发明授权
    Lithography apparatus and pattern forming method using the same having an liquid crystal panel for a photo mask function 有权
    使用该光刻设备的光刻设备和图案形成方法具有用于光掩模功能的液晶面板

    公开(公告)号：US07332734B2

    公开(公告)日：2008-02-19

    申请号：US11139618

    申请日：2005-05-31

    申请人： Ki Dong Lee ,  Seh Won Ahn ,  Sung Hoon Pieh ,  Byoung Ho Park ,  Gyu Tae Kim

    发明人： Ki Dong Lee ,  Seh Won Ahn ,  Sung Hoon Pieh ,  Byoung Ho Park ,  Gyu Tae Kim

    IPC分类号： G01N21/86

    CPC分类号： G03F7/70291 ,  G03F7/7065

    摘要： A lithography apparatus is provided. The apparatus includes: a stage, a first light source unit, an optical system, an image obtaining means, an image edit means, an LC panel, and a second light source unit. The LC panel is coupled with the optical system and receives a signal of the image edited by the image edit means and displays the received image to perform a photo mask function. The second light source unit provides light used in performing an exposure on the test material using the imaged displayed on the LC panel for a photo mask.

    摘要翻译： 提供了一种光刻设备。 该装置包括：舞台，第一光源单元，光学系统，图像获取装置，图像编辑装置，LC面板和第二光源单元。 LC面板与光学系统耦合并接收由图像编辑装置编辑的图像的信号，并显示接收的图像以执行光掩模功能。 第二光源单元使用在用于光掩模的LC面板上显示的成像来提供用于对测试材料进行曝光的光。