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    Semiconductor memory device
    1.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US08477554B2

    公开(公告)日：2013-07-02

    申请号：US13152316

    申请日：2011-06-03

    Applicant: Hak-soo Yu ,  In-gyu Baek ,  Hong-sun Hwang ,  Young-kug Moon

    Inventor： Hak-soo Yu ,  In-gyu Baek ,  Hong-sun Hwang ,  Young-kug Moon

    IPC: G11C5/14 ,  G11C5/02 ,  G11C5/06

    CPC classification number: G11C5/063 ,  G11C5/025

    Abstract: A semiconductor memory device including a plurality of layers each including a memory cell array and which are stacked over each other; and at least one power plane for supplying power to the layers. The power plane includes a region to which a power voltage is applied and a region to which a ground voltage is applied. The region to which a power voltage is applied is located adjacent to the region to which a ground voltage is applied, and forms a decoupling capacitor therebetween to decouple an influx of power noise to the layers or generation of power noise in the layers.

    Abstract translation: 一种半导体存储器件，包括多个层，每个层包括存储单元阵列并彼此堆叠; 以及用于向层供电的至少一个电力平面。 电力平面包括施加电源电压的区域和施加接地电压的区域。 施加电源电压的区域位于与施加接地电压的区域相邻的位置处，并且在其间形成去耦电容器，以将功率噪声涌入到层中或在层中产生功率噪声。

    Nonvolatile Memory Devices Having Cells with Oxygen Diffusion Barrier Layers Therein and Methods of Manufacturing the Same
    3.
    发明申请
    Nonvolatile Memory Devices Having Cells with Oxygen Diffusion Barrier Layers Therein and Methods of Manufacturing the Same 有权
    具有氧扩散阻挡层的电池的非易失性存储器件及其制造方法

    公开(公告)号：US20110291066A1

    公开(公告)日：2011-12-01

    申请号：US13150596

    申请日：2011-06-01

    Applicant: In-gyu Baek ,  Myung-jong Kim ,  Yong-ho Ha

    Inventor： In-gyu Baek ,  Myung-jong Kim ,  Yong-ho Ha

    IPC: H01L47/00

    CPC classification number: H01L45/08 ,  H01L27/2409 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146

    Abstract: A nonvolatile memory cell includes first and second electrodes and a data storage layer extending between the first and second electrodes. An oxygen diffusion barrier layer is provided, which extends between the data storage layer and the first electrode. An oxygen gettering layer is also provided, which extends between the oxygen diffusion barrier layer and the data storage layer. The oxygen diffusion barrier layer includes aluminum oxide, the oxygen gettering layer includes titanium, the data storage layer includes a metal oxide, such as magnesium oxide, and at least one of the first and second electrodes includes a material selected from a group consisting of tungsten, polysilicon, aluminum, titanium nitride silicide and conductive nitrides.

    Abstract translation: 非易失性存储单元包括第一和第二电极以及在第一和第二电极之间延伸的数据存储层。 提供氧扩散阻挡层，其在数据存储层和第一电极之间延伸。 还提供了氧吸气层，其在氧扩散阻挡层和数据存储层之间延伸。 氧扩散阻挡层包括氧化铝，氧吸气层包括钛，数据存储层包括诸如氧化镁的金属氧化物，并且第一和第二电极中的至少一个包括选自钨 ，多晶硅，铝，氮化钛硅化物和导电氮化物。

    Nonvolatile Memory Devices that Use Resistance Materials and Internal Electrodes, and Related Methods and Processing Systems
    5.
    发明申请
    Nonvolatile Memory Devices that Use Resistance Materials and Internal Electrodes, and Related Methods and Processing Systems 有权
    使用电阻材料和内部电极的非易失性存储器件，以及相关方法和处理系统

    公开(公告)号：US20110204315A1

    公开(公告)日：2011-08-25

    申请号：US13101263

    申请日：2011-05-05

    Applicant: In-Gyu Baek ,  Hyun-Jun Sim ,  Jin-Shi Zhao ,  Eun-Kyung Yim

    Inventor： In-Gyu Baek ,  Hyun-Jun Sim ,  Jin-Shi Zhao ,  Eun-Kyung Yim

    IPC: H01L45/00 ,  H01L21/8239

    CPC classification number: G11C13/0007 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0011 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/78 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/1633

    Abstract: A nonvolatile memory device, a method of fabricating the nonvolatile memory device and a processing system including the nonvolatile memory device. The nonvolatile memory device may include a plurality of internal electrodes that extend in a direction substantially perpendicular to a face of a substrate, a plurality of first external electrodes that extend substantially in parallel with the face of the substrate, and a plurality of second external electrodes that also extend substantially in parallel with the face of the substrate. Each first external electrode is on a first side of a respective one of the internal electrodes, and each second external electrode is on a second side of a respective one of the internal electrodes. These devices also include a plurality of variable resistors that contact the internal electrodes, the first external electrodes and the second external electrodes.

    Abstract translation: 非易失性存储器件，非易失性存储器件的制造方法和包括非易失性存储器件的处理系统。 非易失性存储装置可以包括沿基板垂直于基板的方向延伸的多个内部电极，基本上平行于基板的表面延伸的多个第一外部电极和多个第二外部电极 其也基本上平行于衬底的表面延伸。 每个第一外部电极在相应的一个内部电极的第一侧上，并且每个第二外部电极在相应的一个内部电极的第二侧上。 这些器件还包括接触内部电极，第一外部电极和第二外部电极的多个可变电阻器。

    Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the same
    6.
    发明授权
    Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the same 有权
    使用过渡金属氧化物层作为数据存储材料层的非易失性存储单元及其制造方法

    公开(公告)号：US07994557B2

    公开(公告)日：2011-08-09

    申请号：US12781907

    申请日：2010-05-18

    Applicant: In-Gyu Baek ,  Moon-Sook Lee

    Inventor： In-Gyu Baek ,  Moon-Sook Lee

    IPC: H01L27/108 ,  H01L29/76

    CPC classification number: H01L27/115 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

    Abstract: Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer are provided. The non-volatile memory cells include a lower and upper electrodes overlapped with each other. A transition metal oxide layer pattern is provided between the lower and upper electrodes. The transition metal oxide layer pattern is represented by a chemical formula MxOy. In the chemical formula, the characters “M”, “O”, “x” and “y” indicate transition metal, oxygen, a transitional metal composition and an oxygen composition, respectively. The transition metal oxide layer pattern has excessive transition metal content in comparison to a stabilized transition metal oxide layer pattern. Methods of fabricating the non-volatile memory cells are also provided.

    Abstract translation: 提供了使用过渡金属氧化物层作为数据存储材料层的非易失性存储单元。 非易失性存储单元包括彼此重叠的下电极和上电极。 在下电极和上电极之间设置过渡金属氧化物层图案。 过渡金属氧化物层图案由化学式MxOy表示。 在化学式中，字母“M”，“O”，“x”和“y”分别表示过渡金属，氧，过渡金属组成和氧组成。 与稳定的过渡金属氧化物层图案相比，过渡金属氧化物层图案具有过量的过渡金属含量。 还提供了制造非易失性存储单元的方法。

    Multi-level nonvolatile memory devices using variable resistive elements
    9.
    发明申请
    Multi-level nonvolatile memory devices using variable resistive elements 有权
    使用可变电阻元件的多级非易失性存储器件

    公开(公告)号：US20100208508A1

    公开(公告)日：2010-08-19

    申请号：US12656754

    申请日：2010-02-16

    Applicant: In-Gyu Baek ,  Hyun-Jun Sim ,  Hong-Sik Yoon ,  Jin-Shi Zhao ,  Min-Young Park

    Inventor： In-Gyu Baek ,  Hyun-Jun Sim ,  Hong-Sik Yoon ,  Jin-Shi Zhao ,  Min-Young Park

    IPC: G11C11/00

    CPC classification number: G11C13/0007 ,  G11C11/5685 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2211/5641 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/72

    Abstract: Multi-level nonvolatile memory devices using variable resistive elements, the multi-level nonvolatile memory devices including a word line, a bit line, and a multi-level memory cell coupled between the word line and the bit line, the multi-level memory cell having first resistance level and a second resistance level higher than the first resistance level when the first and second write biases having the same polarity are applied thereto, and a third resistance level and a fourth resistance level ranging between the first and second resistance levels, when third and fourth write biases having different polarities from each other are applied thereto.

    Abstract translation: 使用可变电阻元件的多级非易失性存储器件，多级非易失性存储器件包括字线，位线和耦合在字线和位线之间的多电平存储器单元，多电平存储器单元 当施加具有相同极性的第一和第二写入偏置时，具有高于第一电阻电平的第一电阻电平和第二电阻电平，以及在第一和第二电阻电平之间范围内的第三电阻电平和第四电阻电平，当 施加具有彼此不同极性的第三和第四写入偏置。

    Resistive memory cells and devices having asymmetrical contacts
    10.
    发明授权
    Resistive memory cells and devices having asymmetrical contacts 有权
    具有不对称触点的电阻式存储单元和器件

    公开(公告)号：US07639521B2

    公开(公告)日：2009-12-29

    申请号：US11378945

    申请日：2006-03-17

    Applicant: In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    Inventor： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

    IPC: G11C11/00

    CPC classification number: H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

    Abstract: A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

    Abstract translation: 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。

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