发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US11563500申请日： 2006-11-27
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公开(公告)号： US20070138574A1公开(公告)日： 2007-06-21
- 发明人: Katsumi EIKYU , Tomohiro Yamashita , Katsuyuki Horita , Takashi Hayashi
- 申请人： Katsumi EIKYU , Tomohiro Yamashita , Katsuyuki Horita , Takashi Hayashi
- 申请人地址： JP Chiyoda-ku
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2005-365867 20051220
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
The top ends of polysilicon gate electrodes with different gate lengths are formed so as to be equally high and lower than the top end of the side wall. A metal film is formed so as to cover the polysilicon gate electrodes, followed by silicidation by thermal treatment. Since the top ends of the polysilicon gate electrodes are formed lower than the top end of the side wall, a silicon side reaction is not accelerated even in the case of a fine gate length, and proceeds in a one-dimensional manner. As a result, full-silicide gate electrodes having a uniform metal composition ratio can be stably formed even using the polysilicon gates with different gate lengths.