发明申请
US20070164342A1 Semiconductor memory device and method of manufacturing the same
审中-公开
半导体存储器件及其制造方法
- 专利标题： Semiconductor memory device and method of manufacturing the same
- 专利标题（中）： 半导体存储器件及其制造方法
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申请号： US11651965申请日： 2007-01-11
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公开(公告)号： US20070164342A1公开(公告)日： 2007-07-19
- 发明人: Tsutomu Okazaki , Motoi Ashida , Hiroji Ozaki , Tsuyoshi Koga , Daisuke Okada , Masamichi Matsuoka
- 申请人： Tsutomu Okazaki , Motoi Ashida , Hiroji Ozaki , Tsuyoshi Koga , Daisuke Okada , Masamichi Matsuoka
- 专利权人： RENESAS TECHNOLOGY CORP.
- 当前专利权人： RENESAS TECHNOLOGY CORP.
- 优先权： JP2006-006026(P) 20060113
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A polysilicon film forming a memory gate interconnection and the like includes a part extending from a part positioned on one side surface of a control gate interconnection to a side opposite to a side where the control gate interconnection is positioned, and that part serves as a pad portion. A contact hole is formed to expose the pad portion. The height of a part of the polysilicon film that is positioned on one side surface of the control gate interconnection is set equal to or lower than the height of the control gate interconnection so that the polysilicon film forming a memory gate interconnection and the like does not two-dimensionally overlap the control gate interconnection. Therefore, a semiconductor memory device with increased process margin can be obtained.
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