发明申请
US20070170867A1 Plasma Immersion Ion Source With Low Effective Antenna Voltage
审中-公开
具有低有效天线电压的等离子体浸入式离子源
- 专利标题: Plasma Immersion Ion Source With Low Effective Antenna Voltage
- 专利标题(中): 具有低有效天线电压的等离子体浸入式离子源
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申请号: US11617785申请日: 2006-12-29
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公开(公告)号: US20070170867A1公开(公告)日: 2007-07-26
- 发明人: Harold M. Persing , Vikram Singh , Edmund J. Winder
- 申请人: Harold M. Persing , Vikram Singh , Edmund J. Winder
- 申请人地址: US MA Gloucester
- 专利权人: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01J7/24
- IPC分类号: H01J7/24 ; C23F1/00
摘要:
A plasma source includes a chamber that contains a process gas. The chamber includes a dielectric window that passes electromagnetic radiation. A RF power supply generates a RF signal. At least one RF antenna with a reduced effective antenna voltage is connected to the RF power supply. The at least one RF antenna is positioned proximate to the dielectric window so that the RF signal electromagnetically couples into the chamber to excite and ionize the process gas, thereby forming a plasma in the chamber.
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