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101 条记录 (耗时 0.024 秒)

    TECHNIQUE FOR USING AN IMPROVED SHIELD RING IN PLASMA-BASED ION IMPLANTATION
    1.
    发明申请
    TECHNIQUE FOR USING AN IMPROVED SHIELD RING IN PLASMA-BASED ION IMPLANTATION 审中-公开
    在等离子体离子植入中使用改进的护环的技术

    公开(公告)号：US20080160170A1

    公开(公告)日：2008-07-03

    申请号：US11617348

    申请日：2006-12-28

    申请人： Timothy Miller ,  Edmund J. Winder ,  Richard J. Hetel ,  Harold M. Persing ,  Vikram Singh

    发明人： Timothy Miller ,  Edmund J. Winder ,  Richard J. Hetel ,  Harold M. Persing ,  Vikram Singh

    IPC分类号： C23C14/02 ,  B05C11/00

    CPC分类号： H01J37/32082 ,  H01J37/32018 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/32642 ,  H01J37/32935 ,  H01J37/3299

    摘要： A technique for using an improved shield ring in plasma-based ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for plasma-based ion implantation, such as radio frequency plasma doping (RF-PLAD). The apparatus and method may comprise a shield ring positioned on a same plane as and around a periphery of a target wafer, wherein the shield ring comprises an aperture-defining device for defining an area of at least one aperture, a Faraday cup positioned under the at least one aperture, and dose count electronics connected the Faraday cup for calculating ion dose rate. The at least one aperture may comprise at least one of a circular, arc-shaped, slit-shaped, ring-shaped, rectangular, triangular, and elliptical shape. The aperture-defining device may comprise at least one of silicon, silicon carbide, carbon, and graphite.

    摘要翻译： 公开了一种在等离子体离子注入中使用改进的屏蔽环的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于基于等离子体的离子注入的装置和方法，例如射频等离子体掺杂（RF-PLAD）。 该装置和方法可以包括一个屏蔽环，该屏蔽环与目标晶片的周边定位在同一平面上，其中屏蔽环包括用于限定至少一个孔的区域的孔限定装置，位于下方的法拉第杯 至少一个孔径和剂量计数电子元件连接法拉第杯以计算离子剂量率。 至少一个孔可以包括圆形，弧形，狭缝状，环形，矩形，三角形和椭圆形中的至少一个。 孔限定装置可以包括硅，碳化硅，碳和石墨中的至少一种。

    Technique for boron implantation
    2.
    发明授权
    Technique for boron implantation 有权
    硼植入技术

    公开(公告)号：US07397048B2

    公开(公告)日：2008-07-08

    申请号：US11227079

    申请日：2005-09-16

    申请人： Vikram Singh ,  Edmund J. Winder ,  Harold M. Persing ,  Timothy Jerome Miller ,  Ziwei Fang ,  Atul Gupta

    发明人： Vikram Singh ,  Edmund J. Winder ,  Harold M. Persing ,  Timothy Jerome Miller ,  Ziwei Fang ,  Atul Gupta

    IPC分类号： H05H1/42

    CPC分类号： H01L21/2236 ,  H01J37/32082 ,  H01J37/32412 ,  H01L21/26513

    摘要： A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.

    摘要翻译： 公开了硼注入技术。 在一个特定的示例性实施例中，该技术可以由用于硼注入的装置来实现。 该装置可以包括反应室。 该装置还可以包含耦合到反应室的五硼烷的源，其中源能够将基本上纯的形式的五硼烷供应到反应室中。 该装置还可以包括电源，其被配置为充分激发反应室中的五硼烷以产生具有含硼离子的等离子体放电。

    Plasma Immersion Ion Source With Low Effective Antenna Voltage
    3.
    发明申请
    Plasma Immersion Ion Source With Low Effective Antenna Voltage 审中-公开
    具有低有效天线电压的等离子体浸入式离子源

    公开(公告)号：US20070170867A1

    公开(公告)日：2007-07-26

    申请号：US11617785

    申请日：2006-12-29

    申请人： Harold M. Persing ,  Vikram Singh ,  Edmund J. Winder

    发明人： Harold M. Persing ,  Vikram Singh ,  Edmund J. Winder

    IPC分类号： H01J7/24 ,  C23F1/00

    CPC分类号： H01J37/321 ,  H01J37/32412

    摘要： A plasma source includes a chamber that contains a process gas. The chamber includes a dielectric window that passes electromagnetic radiation. A RF power supply generates a RF signal. At least one RF antenna with a reduced effective antenna voltage is connected to the RF power supply. The at least one RF antenna is positioned proximate to the dielectric window so that the RF signal electromagnetically couples into the chamber to excite and ionize the process gas, thereby forming a plasma in the chamber.

    摘要翻译： 等离子体源包括含有工艺气体的腔室。 该室包括通过电磁辐射的电介质窗。 RF电源产生RF信号。 具有降低的有效天线电压的至少一个RF天线连接到RF电源。 至少一个RF天线被定位成靠近电介质窗口，使得RF信号电磁耦合到室中以激发和离子化工艺气体，从而在腔室中形成等离子体。

    Plasma Doping System with In-Situ Chamber Condition Monitoring
    4.
    发明申请
    Plasma Doping System with In-Situ Chamber Condition Monitoring 审中-公开
    等离子体掺杂系统与原位室状态监测

    公开(公告)号：US20090104719A1

    公开(公告)日：2009-04-23

    申请号：US11877312

    申请日：2007-10-23

    申请人： Atul Gupta ,  Timothy Miller ,  Harold M. Persing ,  Daniel Distaso ,  Vikram Singh

    发明人： Atul Gupta ,  Timothy Miller ,  Harold M. Persing ,  Daniel Distaso ,  Vikram Singh

    IPC分类号： H01L21/66

    CPC分类号： H01L22/20 ,  H01L22/12

    摘要： A method of in-situ monitoring of a plasma doping process includes generating a plasma comprising dopant ions in a chamber proximate to a platen supporting a substrate. A platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A dose of ions attracted to the substrate is measured. At least one sensor measurement is performed to determine the condition of the plasma chamber. In addition, at least one plasma process parameter is modified in response to the measured dose and in response to the at least one sensor measurement.

    摘要翻译： 等离子体掺杂过程的原位监测方法包括在靠近支撑衬底的压板的腔室中产生包含掺杂剂离子的等离子体。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 测量吸附到基底的一定剂量的离子。 执行至少一个传感器测量以确定等离子体室的状态。 此外，至少一个等离子体处理参数响应于测量的剂量并且响应于至少一个传感器测量而被修改。

    Profile adjustment in plasma ion implanter
    7.
    发明授权
    Profile adjustment in plasma ion implanter 有权
    等离子体离子注入机轮廓调整

    公开(公告)号：US07528389B2

    公开(公告)日：2009-05-05

    申请号：US11376522

    申请日：2006-03-15

    申请人： Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold M. Persing

    发明人： Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold M. Persing

    IPC分类号： H01J37/244

    CPC分类号： H01J37/32412 ,  H01J37/3171 ,  H01J37/3299 ,  H01J2237/31705

    摘要： A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.

    摘要翻译： 一种方法和装置旨在在等离子体掺杂系统中提供掺杂剂分布调整解决方案，以满足浓度和结深度要求。 可以执行偏置斜坡调整和偏置斜率调整以实现期望的掺杂剂分布，使得在垂直和横向方向上的浅和突变结被实现，这对于等离子体掺杂系统中的器件缩放至关重要。

    PLASMA ION IMPLANTATION PROCESS CONTROL USING REFLECTOMETRY
    9.
    发明申请
    PLASMA ION IMPLANTATION PROCESS CONTROL USING REFLECTOMETRY 审中-公开
    使用反射光谱的等离子体离子植入过程控制

    公开(公告)号：US20080318345A1

    公开(公告)日：2008-12-25

    申请号：US11766984

    申请日：2007-06-22

    申请人： Harold M. Persing ,  Vikram Singh ,  Edwin Arevalo

    发明人： Harold M. Persing ,  Vikram Singh ,  Edwin Arevalo

    IPC分类号： H01L21/265 ,  G01B9/02 ,  G21K5/00

    CPC分类号： G01N21/55 ,  G01N2021/8416 ,  H01J37/32412 ,  H01J37/32935

    摘要： An approach that determines an ion implantation processing characteristic in a plasma ion implantation of a substrate is described. In one embodiment, there is a light source configured to direct radiation onto the substrate. A detector is configured to measure radiation reflected from the substrate. A processor is configured to correlate the measured radiation reflected from the substrate to an ion implantation processing characteristic.

    摘要翻译： 描述了确定衬底的等离子体离子注入中的离子注入处理特性的方法。 在一个实施例中，存在被配置为将辐射引导到衬底上的光源。 检测器被配置成测量从衬底反射的辐射。 处理器被配置为将从衬底反射的测量的辐射与离子注入处理特性相关联。

    Pulsed plasma to affect conformal processing
    10.
    发明授权
    Pulsed plasma to affect conformal processing 有权
    脉冲等离子体影响保形加工

    公开(公告)号：US08877654B2

    公开(公告)日：2014-11-04

    申请号：US12760847

    申请日：2010-04-15

    申请人： Helen Maynard ,  Vikram Singh ,  Svetlana Radovanov ,  Harold Persing

    发明人： Helen Maynard ,  Vikram Singh ,  Svetlana Radovanov ,  Harold Persing

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02274 ,  H01L21/2236 ,  H01L21/3065 ,  H01L29/66803

    摘要： A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.

    摘要翻译： 提供等离子体处理方法。 等离子体处理方法包括使用脉冲功率等离子体的余辉进行保形加工。 在余辉期间，等电场线跟随工件表面的轮廓，允许以各种入射角度，特别是非平面表面引入离子。 在本公开的另一方面，压片可在等离子体余辉期间被正向偏压以将负离子吸引到工件。 可以执行各种适形处理步骤，例如植入，蚀刻和沉积。