-
1.发明申请TECHNIQUE FOR USING AN IMPROVED SHIELD RING IN PLASMA-BASED ION IMPLANTATION 审中-公开在等离子体离子植入中使用改进的护环的技术公开(公告)号：US20080160170A1
公开(公告)日：2008-07-03
申请号：US11617348
申请日：2006-12-28
CPC分类号： H01J37/32082 , H01J37/32018 , H01J37/32412 , H01J37/32422 , H01J37/32642 , H01J37/32935 , H01J37/3299
摘要： A technique for using an improved shield ring in plasma-based ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for plasma-based ion implantation, such as radio frequency plasma doping (RF-PLAD). The apparatus and method may comprise a shield ring positioned on a same plane as and around a periphery of a target wafer, wherein the shield ring comprises an aperture-defining device for defining an area of at least one aperture, a Faraday cup positioned under the at least one aperture, and dose count electronics connected the Faraday cup for calculating ion dose rate. The at least one aperture may comprise at least one of a circular, arc-shaped, slit-shaped, ring-shaped, rectangular, triangular, and elliptical shape. The aperture-defining device may comprise at least one of silicon, silicon carbide, carbon, and graphite.
摘要翻译： 公开了一种在等离子体离子注入中使用改进的屏蔽环的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于基于等离子体的离子注入的装置和方法，例如射频等离子体掺杂（RF-PLAD）。 该装置和方法可以包括一个屏蔽环，该屏蔽环与目标晶片的周边定位在同一平面上，其中屏蔽环包括用于限定至少一个孔的区域的孔限定装置，位于下方的法拉第杯 至少一个孔径和剂量计数电子元件连接法拉第杯以计算离子剂量率。 至少一个孔可以包括圆形，弧形，狭缝状，环形，矩形，三角形和椭圆形中的至少一个。 孔限定装置可以包括硅，碳化硅，碳和石墨中的至少一种。
-
公开(公告)号：US07397048B2
公开(公告)日：2008-07-08
申请号：US11227079
申请日：2005-09-16
申请人： Vikram Singh , Edmund J. Winder , Harold M. Persing , Timothy Jerome Miller , Ziwei Fang , Atul Gupta
发明人： Vikram Singh , Edmund J. Winder , Harold M. Persing , Timothy Jerome Miller , Ziwei Fang , Atul Gupta
IPC分类号： H05H1/42
CPC分类号： H01L21/2236 , H01J37/32082 , H01J37/32412 , H01L21/26513
摘要： A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.
摘要翻译： 公开了硼注入技术。 在一个特定的示例性实施例中，该技术可以由用于硼注入的装置来实现。 该装置可以包括反应室。 该装置还可以包含耦合到反应室的五硼烷的源，其中源能够将基本上纯的形式的五硼烷供应到反应室中。 该装置还可以包括电源，其被配置为充分激发反应室中的五硼烷以产生具有含硼离子的等离子体放电。
-
公开(公告)号：US20070170867A1
公开(公告)日：2007-07-26
申请号：US11617785
申请日：2006-12-29
CPC分类号： H01J37/321 , H01J37/32412
摘要： A plasma source includes a chamber that contains a process gas. The chamber includes a dielectric window that passes electromagnetic radiation. A RF power supply generates a RF signal. At least one RF antenna with a reduced effective antenna voltage is connected to the RF power supply. The at least one RF antenna is positioned proximate to the dielectric window so that the RF signal electromagnetically couples into the chamber to excite and ionize the process gas, thereby forming a plasma in the chamber.
摘要翻译： 等离子体源包括含有工艺气体的腔室。 该室包括通过电磁辐射的电介质窗。 RF电源产生RF信号。 具有降低的有效天线电压的至少一个RF天线连接到RF电源。 至少一个RF天线被定位成靠近电介质窗口，使得RF信号电磁耦合到室中以激发和离子化工艺气体，从而在腔室中形成等离子体。
-
4.发明申请Monitoring plasma ion implantation systems for fault detection and process control 失效监测等离子体离子注入系统进行故障检测和过程控制公开(公告)号：US20080026133A1
公开(公告)日：2008-01-31
申请号：US10858582
申请日：2004-06-02
申请人： Ziwei Fang , Sung-Cheon Ko , Edmund J. Winder , Daniel Distaso , Ludovic Godet , Bon Woong Koo , Jay T. Scheuer
发明人： Ziwei Fang , Sung-Cheon Ko , Edmund J. Winder , Daniel Distaso , Ludovic Godet , Bon Woong Koo , Jay T. Scheuer
CPC分类号： H01J37/32412
摘要： A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.
摘要翻译： 等离子体离子注入系统包括处理室，用于在处理室中产生等离子体的源，用于在处理室中保持衬底的压板和用于产生用于将等离子体离子加速到衬底中的用于产生注入脉冲的脉冲源。 在一个方面，该系统包括配置成测量处理室中的离子质量和能量的等离子体监测器，以及配置成响应于测量的质量和能量来确定系统的操作状态的分析器。 在另一方面，该系统包括：数据获取单元，被配置为获取植入脉冲的样本和被配置为基于获取的样本来确定系统的操作条件的分析器。
-
5.发明授权Monitoring plasma ion implantation systems for fault detection and process control 失效监测等离子体离子注入系统进行故障检测和过程控制公开(公告)号：US07878145B2
公开(公告)日：2011-02-01
申请号：US10858582
申请日：2004-06-02
申请人： Ziwei Fang , Sung-Cheon Ko , Edmund J. Winder , Daniel Distaso , Ludovic Godet , Bon Woong Koo , Jay T. Scheuer
发明人： Ziwei Fang , Sung-Cheon Ko , Edmund J. Winder , Daniel Distaso , Ludovic Godet , Bon Woong Koo , Jay T. Scheuer
IPC分类号： C23C16/00
CPC分类号： H01J37/32412
摘要： A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.
摘要翻译： 等离子体离子注入系统包括处理室，用于在处理室中产生等离子体的源，用于在处理室中保持衬底的压板和用于产生用于将等离子体离子加速到衬底中的用于产生注入脉冲的脉冲源。 在一个方面，该系统包括配置成测量处理室中的离子质量和能量的等离子体监测器，以及配置成响应于测量的质量和能量来确定系统的操作状态的分析器。 在另一方面，该系统包括：数据获取单元，被配置为获取植入脉冲的样本和被配置为基于获取的样本来确定系统的操作条件的分析器。
-
-
-
-
搜索结果
5 条记录 (耗时 0.034 秒)
