SiCOH dielectric

Invention Application

US20070173071A1 SiCOH dielectric 审中-公开

Title translation: SiCOH电介质

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Patent Title: SiCOH dielectric
Patent Title (中): SiCOH电介质
Application No.: US11336726

Application Date: 2006-01-20
Publication No.: US20070173071A1

Publication Date: 2007-07-26
Inventor: Ali Afzali-Ardakani , Stephen Gates , Alfred Grill , Deborah Neumayer , Son Nguyen , Vishnubhai Patel
Applicant: Ali Afzali-Ardakani , Stephen Gates , Alfred Grill , Deborah Neumayer , Son Nguyen , Vishnubhai Patel
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Main IPC: H01L21/469
IPC: H01L21/469 ; H01L23/58

Abstract:

A porous composite material useful in semiconductor device manufacturing, in which the diameter (or characteristic dimension) of the pores and the pore size distribution (PSD) is controlled in a nanoscale manner and which exhibits improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties is provided. The porous composite material is fabricating utilizing at least one bifunctional organic porogen as a precursor compound

Abstract(Chinese):

可用于半导体器件制造的多孔复合材料，其中孔的直径（或特征尺寸）和孔径分布（PSD）以纳米级方式进行控制，并且其表现出改进的内聚强度（或等效地提高的断裂韧性或降低脆性），并且提供了诸如应力腐蚀开裂，Cu进入和其它关键性能等性能的降低的耐水分性。多孔复合材料是利用至少一种双功能有机致孔剂作为前体化合物制造的

Public/Granted literature

US1671728A Brake shoe Public/Granted day:1928-05-29

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理