发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US11622670申请日： 2007-01-12
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公开(公告)号： US20070176220A1公开(公告)日： 2007-08-02
- 发明人: Tetsuo Takahashi , Tomohide Terashima
- 申请人： Tetsuo Takahashi , Tomohide Terashima
- 申请人地址： JP Chiyoda-ku
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2006-018594 20060127
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A semiconductor device, including: a semiconductor substrate of a first conductivity type; a semiconductor layer of a second conductivity type formed on the semiconductor substrate; a trench formed in the semiconductor region; a trench diffusion layer of the first conductivity type formed along wall surfaces of the trench; and a buried conductor buried in the trench, wherein an insulation film is further disposed between the wall surfaces of the trench and the buried conductor.
公开/授权文献
- US07709925B2 Semiconductor device 公开/授权日：2010-05-04
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