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    Optical switch
    2.
    发明授权
    Optical switch 有权
    光开关

    公开(公告)号：US09307301B2

    公开(公告)日：2016-04-05

    申请号：US14239771

    申请日：2012-09-14

    Applicant: Kenya Suzuki ,  Kazunori Seno ,  Naoki Ooba ,  Toshio Watanabe ,  Tetsuo Takahashi

    Inventor： Kenya Suzuki ,  Kazunori Seno ,  Naoki Ooba ,  Toshio Watanabe ,  Tetsuo Takahashi

    IPC: H04Q11/00 ,  G02B6/35

    CPC classification number: H04Q11/0003 ,  G02B6/3518 ,  G02B6/3534

    Abstract: The discloser provides a multi-input and multi-output optical switch capable of switching over all WDM wavelengths. An optical switch according to one embodiment includes: an optical demultiplexing element (3) that demultiplexes an optical signal from at least one input port into individual wavelengths; a first optical deflection element (5), which deflects an incident optical signal, that deflects the wavelength-separated optical signal incoming from the optical demultiplexing element to change a traveling direction for each wavelength to a switch axis direction perpendicular to a wavelength dispersion axis direction; a second optical deflection element (8) that deflects the optical signal incoming from the first optical deflection element to change the traveling direction to the switch axis direction for output to at least one of the output ports; and an optical multiplexing element (10) that multiplexes the optical signal with the different wavelengths incoming from the second optical deflection element.

    Abstract translation: 该解决方案提供了能够切换所有WDM波长的多输入和多输出光开关。 根据一个实施例的光开关包括：光解复用元件（3），其将来自至少一个输入端口的光信号解复用为各个波长; 第一光偏转元件（5），其使入射光信号偏转，偏转从光解复用元件输入的波长分离的光信号，以将每个波长的行进方向改变为垂直于波长色散轴方向的开关轴方向 ; 第二光学偏转元件（8），其偏转从第一光学偏转元件入射的光学信号，以将行进方向改变到开关轴线方向，以输出到至少一个输出端口; 以及光复用元件（10），其将光信号与从第二光偏转元件入射的不同波长进行复用。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09236436B2

    公开(公告)日：2016-01-12

    申请号：US12651055

    申请日：2009-12-31

    Applicant: Tetsuo Takahashi ,  Takami Otsuki

    Inventor： Tetsuo Takahashi ,  Takami Otsuki

    IPC: H01L23/58 ,  H01L29/40 ,  H01L29/06 ,  H01L29/739

    CPC classification number: H01L29/404 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/7395

    Abstract: A semiconductor device includes: a semiconductor substrate having a main surface having an element formation region, a guard ring, a guard ring electrode, a channel stopper region, a channel stopper electrode, and a field plate disposed over and insulated from the semiconductor substrate. The field plate includes a first portion located between the main surface of the semiconductor substrate and the guard ring electrode, and a second portion located between the main surface of the semiconductor substrate and the channel stopper electrode. The first portion has a portion overlapping with the guard ring electrode when viewed in a plan view. The second portion has a portion overlapping with the channel stopper electrode when viewed in the plan view. In this way, a semiconductor device allowing for stabilized breakdown voltage can be obtained.

    Abstract translation: 半导体器件包括：具有设置在半导体衬底上并与半导体衬底绝缘的具有元件形成区域的主表面，保护环，保护环电极，沟道阻挡区域，沟道阻挡电极和场板的半导体衬底。 场板包括位于半导体衬底的主表面和保护环电极之间的第一部分和位于半导体衬底的主表面和通道阻挡电极之间的第二部分。 当在俯视图中观察时，第一部分具有与保护环电极重叠的部分。 当在平面图中观察时，第二部分具有与通道阻挡电极重叠的部分。 以这种方式，可以获得允许稳定的击穿电压的半导体器件。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130153954A1

    公开(公告)日：2013-06-20

    申请号：US13614503

    申请日：2012-09-13

    Applicant: Tetsuo TAKAHASHI

    Inventor： Tetsuo TAKAHASHI

    IPC: H01L29/739

    CPC classification number: H01L29/7395 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/861

    Abstract: In one surface of a semiconductor substrate, an n− layer, a p base layer, a p well layer, another p well layer, a channel stopper layer, an emitter electrode, a guard ring electrode, and a channel stopper electrode for example are formed. In the other surface of the semiconductor substrate, an n+ buffer layer, a p+ collector layer, and a collector electrode are formed. In a curved corner of the p well layer, a p low-concentration layer having a lower impurity concentration than the impurity concentration of the p well layer is formed from the surface to a predetermined depth.

    Abstract translation: 在半导体衬底的一个表面中，形成例如n层，p基底层，p阱层，另一个p阱层，沟道阻挡层，发射极，保护环电极和沟道阻挡电极。 在半导体衬底的另一个表面上形成n +缓冲层，p +集电极层和集电极。 在p阱层的弯曲角部，从表面形成具有比p阱层的杂质浓度低的杂质浓度的p低浓度层至预定深度。

    Multiplexing transmission system and multiplexing transmission method
    7.
    发明授权
    Multiplexing transmission system and multiplexing transmission method 有权
    复用传输系统和复用传输方法

    公开(公告)号：US07970008B2

    公开(公告)日：2011-06-28

    申请号：US12438056

    申请日：2007-09-21

    Applicant: Yoshiaki Kisaka ,  Shigeki Aisawa ,  Tetsuo Takahashi ,  Takuya Ohara ,  Masafumi Koga ,  Masahito Tomizawa ,  Yutaka Miyamoto

    Inventor： Yoshiaki Kisaka ,  Shigeki Aisawa ,  Tetsuo Takahashi ,  Takuya Ohara ,  Masafumi Koga ,  Masahito Tomizawa ,  Yutaka Miyamoto

    IPC: H04J3/22

    CPC classification number: H04J3/1664 ,  H04J3/07 ,  H04L25/14

    Abstract: A multiplexing transmission system for adding a management overhead to a client signal, and transparently accommodating or multiplexing the client signal to transmit it is provided. The multiplexing transmission system: accommodates a plurality of client signals of different bit rates including a client signal of a bit rate that is not an integral multiple or an integral submultiple of a bit rate of other client signal, and performs rate adjustment for a part or the whole of the plurality of client signals such that the bit rate of each client signal becomes an integral multiple or integral submultiple of the bit rate of other client signal.

    Abstract translation: 提供了一种用于将客户信号的管理开销加入并且透明地容纳或多路复用客户信号以进行传输的复用传输系统。 复用传输系统：容纳不同比特率的多个客户端信号，包括不是整数倍的比特率的客户端信号或其他客户端信号的比特率的整数倍，并且对一部分进行速率调整， 整个多个客户端信号，使得每个客户端信号的比特率变成其他客户端信号的比特率的整数倍或整数倍。

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20090283797A1

    公开(公告)日：2009-11-19

    申请号：US12243335

    申请日：2008-10-01

    Applicant: Tetsuo TAKAHASHI ,  Yoshifumi Tomomatsu

    Inventor： Tetsuo TAKAHASHI ,  Yoshifumi Tomomatsu

    IPC: H01L29/739

    CPC classification number: H01L29/7397

    Abstract: There is provided a semiconductor device in which an amount of fluctuations in output capacitance and feedback capacitance is reduced. In a trench-type insulated gate semiconductor device, a width of a portion of an electric charge storage layer in a direction along which a gate electrode and a dummy gate are aligned is set to be at most 1.4 μm.

    Abstract translation: 提供了一种半导体器件，其中输出电容和反馈电容的波动量减小。 在沟槽式绝缘栅极半导体器件中，栅电极和虚拟栅极对准的方向上的电荷存储层的一部分的宽度设定为1.4μm以下。

    Optical inspection system and its illumination method
    10.
    发明申请
    Optical inspection system and its illumination method 审中-公开
    光学检测系统及其照明方法

    公开(公告)号：US20070033680A1

    公开(公告)日：2007-02-08

    申请号：US11486594

    申请日：2006-07-13

    Applicant: Tetsuo Takahashi

    Inventor： Tetsuo Takahashi

    IPC: G21K7/00

    CPC classification number: G03F1/84 ,  G01N21/9501 ,  G02B21/06

    Abstract: An optical inspection system provided with a light source, object lens, illumination optical system emitting illumination light generated from the light source through an object lens to a sample, and imaging optical system forming an image of the sample projected by the object lens, the optical inspection system further provided with an imaging optical system magnification changer for changing the magnification of the imaging optical system and an illumination light cross-sectional dimension changer provided at the illumination optical system and changing the cross-sectional dimensions of the illumination light emitted to the sample in accordance with the magnification of the imaging optical system.

    Abstract translation: 一种光学检查系统，具有光源，物镜，照明光学系统，其将从光源通过物镜发出的照明光发射到样本，以及成像光学系统，形成由物镜投射的样本的图像，光学 检查系统还设置有用于改变成像光学系统的放大率的成像光学系统倍率变换器和设置在照明光学系统处的照明光截面尺寸变换器，并且改变发射到样本的照明光的横截面尺寸 根据成像光学系统的放大倍率。

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