发明申请
US20070178689A1 Gallium nitride based III-V group compund semiconductor device and method of producing the same
失效
基于氮化镓的III-V族组合半导体器件及其制造方法
- 专利标题： Gallium nitride based III-V group compund semiconductor device and method of producing the same
- 专利标题（中）： 基于氮化镓的III-V族组合半导体器件及其制造方法
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申请号： US11714890申请日： 2007-03-07
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公开(公告)号： US20070178689A1公开(公告)日： 2007-08-02
- 发明人: Shuji Nakamura , Takao Yamada , Masayuki Senoh , Motokazu Yamada , Kanji Bando
- 申请人： Shuji Nakamura , Takao Yamada , Masayuki Senoh , Motokazu Yamada , Kanji Bando
- 申请人地址： JP Anan-shi
- 专利权人： Nichia Corporation
- 当前专利权人： Nichia Corporation
- 当前专利权人地址： JP Anan-shi
- 优先权： JP5-124890 19930428; JP5-129313 19930531; JP5-207274 19930728; JP5-234684 19930921; JP5-234685 19930921; JP5-253171 19931008; JP6-8726 19940128; JP6-8727 19940128
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
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