公开(公告)号：US06998690B2

公开(公告)日：2006-02-14

申请号：US10609410

申请日：2003-07-01

Applicant: Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

Inventor： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC: H01L27/14

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract translation: 基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。 欧姆电极由金属材料形成，并被退火。

公开(公告)号：US20050127394A1

公开(公告)日：2005-06-16

申请号：US11026062

申请日：2005-01-03

Applicant: Shinichi Nagahama ,  Masayuki Senoh ,  Shuji Nakamura

Inventor： Shinichi Nagahama ,  Masayuki Senoh ,  Shuji Nakamura

IPC: H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/32 ,  H01S5/323 ,  H01L33/00

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L2924/0002 ,  H01S5/3054 ,  H01S5/3216 ,  H01S5/32341 ,  H01S2301/173 ,  H01L2924/00

Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

Abstract translation: 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。

公开(公告)号：US06204512B1

公开(公告)日：2001-03-20

申请号：US09448479

申请日：1999-11-24

Applicant: Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

Inventor： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC: H01L2972

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract translation: 基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。 欧姆电极由金属材料形成，并被退火。

公开(公告)号：US5877558A

公开(公告)日：1999-03-02

申请号：US995167

申请日：1997-12-19

Applicant: Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

Inventor： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC: H01L21/00 ,  H01L21/285 ,  H01L29/20 ,  H01L29/72 ,  H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01L29/78

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/42 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L29/2003 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  H01L33/38 ,  H01L33/44 ,  H01S5/0425 ,  H01S5/32341 ,  Y02E10/50

Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

公开(公告)号：US20100025657A1

公开(公告)日：2010-02-04

申请号：US12570907

申请日：2009-09-30

Applicant: Shinichi NAGAHAMA ,  Masayuki Senoh ,  Shuji Nakamura

Inventor： Shinichi NAGAHAMA ,  Masayuki Senoh ,  Shuji Nakamura

IPC: H01L33/00

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L2924/0002 ,  H01S5/3054 ,  H01S5/3216 ,  H01S5/32341 ,  H01S2301/173 ,  H01L2924/00

Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

Abstract translation: 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。

公开(公告)号：US07615804B2

公开(公告)日：2009-11-10

申请号：US11025897

申请日：2005-01-03

Applicant: Shinichi Nagahama ,  Masayuki Senoh ,  Shuji Nakamura

Inventor： Shinichi Nagahama ,  Masayuki Senoh ,  Shuji Nakamura

IPC: H01L33/00

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L2924/0002 ,  H01S5/3054 ,  H01S5/3216 ,  H01S5/32341 ,  H01S2301/173 ,  H01L2924/00

Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

Abstract translation: 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。

公开(公告)号：US20050121679A1

公开(公告)日：2005-06-09

申请号：US11025897

申请日：2005-01-03

Applicant: Shinichi Nagahama ,  Masayuki Senoh ,  Shuji Nakamura

Inventor： Shinichi Nagahama ,  Masayuki Senoh ,  Shuji Nakamura

IPC: H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/32 ,  H01S5/323 ,  H01L23/48 ,  H01L29/22 ,  H01L31/072

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L2924/0002 ,  H01S5/3054 ,  H01S5/3216 ,  H01S5/32341 ,  H01S2301/173 ,  H01L2924/00

Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

公开(公告)号：US06507041B2

公开(公告)日：2003-01-14

申请号：US09750912

申请日：2001-01-02

Applicant: Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

Inventor： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC: H01L2972

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract translation: 基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。 欧姆电极由金属材料形成，并被退火。

公开(公告)号：US5306662A

公开(公告)日：1994-04-26

申请号：US970145

申请日：1992-11-02

Applicant: Shuji Nakamura ,  Naruhito Iwasa ,  Masayuki Senoh

Inventor： Shuji Nakamura ,  Naruhito Iwasa ,  Masayuki Senoh

IPC: H01L33/00 ,  H01L33/32 ,  H01L21/203

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/0087 ,  Y10S148/003 ,  Y10S148/004 ,  Y10S148/064 ,  Y10S438/902 ,  Y10S438/909

Abstract: A method for manufacturing a III-V Group compound or a II-VI Group compound semiconductor element by VPE, comprising the step of annealing a grown compound at 400.degree. C. or higher, or irradiating electron beam the grown compound at 600.degree. C. or higher.

Abstract translation: 一种通过VPE制造III-V族化合物或II-VI族化合物半导体元件的方法，包括在400℃或更高温度下退火生长的化合物或在600℃照射生长的化合物的步骤。 或更高。

公开(公告)号：US07205220B2

公开(公告)日：2007-04-17

申请号：US11198465

申请日：2005-08-08

Applicant: Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

Inventor： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC: H01L21/3205

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract translation: 基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。 欧姆电极由金属材料形成，并被退火。