发明申请
- 专利标题： Nitride semiconductor single crystal film
- 专利标题（中）： 氮化物半导体单晶膜
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申请号： US11714259申请日： 2007-03-06
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公开(公告)号： US20070210304A1公开(公告)日： 2007-09-13
- 发明人: Jun Komiyama , Yoshihisa Abe , Shunichi Suzuki , Hideo Nakanishi
- 申请人： Jun Komiyama , Yoshihisa Abe , Shunichi Suzuki , Hideo Nakanishi
- 专利权人： TOSHIBA CERAMICS CO., LTD.
- 当前专利权人： TOSHIBA CERAMICS CO., LTD.
- 优先权： JP2006-065081 20060310; JP2006-349128 20061226
- 主分类号： H01L29/08
- IPC分类号： H01L29/08
摘要：
The present invention provides a nitride semiconductor single crystal including gallium nitride (GaN) or aluminum nitride (AlN) which are formed as a film to have good crystallinity without forming a 3C—SiC layer on a Si substrate, and which can be used suitably for a light emitting diode, a laser light emitting element, an electronic element that can be operated at a high speed and a high temperature, etc., as well as a high frequency device.A GaN (0001) or AlN (0001) single crystal film, or a super-lattice structure of GaN (0001) and AlN (0001) is formed on a Si (110) substrate via a 2H—AlN buffer layer.
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