公开(公告)号：US07276125B2

公开(公告)日：2007-10-02

申请号：US11017711

申请日：2004-12-22

申请人： Toshikazu Miyamoto ,  Tadashi Ohashi

发明人： Toshikazu Miyamoto ,  Tadashi Ohashi

IPC分类号： C23C16/00 ,  C23C14/00 ,  H01L21/00

CPC分类号： C30B35/00 ,  C23C16/4581 ,  C23C16/4588 ,  C30B23/02 ,  C30B25/02

摘要： The barrel type susceptor for use in the semiconductor epitaxial growth is characterized in that a face plate 5 of a susceptor main body 2 having the shape of a truncated cone is partitioned into two or more in a longitudinal direction thereof, each partition being provided with a wafer mounting concave portion 6a, 6b, 6c on which a wafer is laid, and the inclination angle θa, θb, θc of a bottom face 6a1, 6b1, 6c1 of the concave portion for each partition to the vertical line is gradually decreased in each partition from the upper part to the lower part.

摘要翻译： 用于半导体外延生长的桶型感受体的特征在于，具有截头圆锥形状的基座主体2的面板5在其纵向被分隔成两个或更多个，每个隔板设置有 在其上放置晶片的晶片安装凹部6a，6b，6c以及底面6a，6b1，...的倾斜角度θa，tab， 每个分隔物的垂直线的凹部的直径的比例从上部到下部逐渐减小。

公开(公告)号：US20050160991A1

公开(公告)日：2005-07-28

申请号：US11017711

申请日：2004-12-22

申请人： Toshikazu Miyamoto ,  Tadashi Ohashi

发明人： Toshikazu Miyamoto ,  Tadashi Ohashi

IPC分类号： C23C16/458 ,  C23C16/00 ,  H01L21/205

CPC分类号： C30B35/00 ,  C23C16/4581 ,  C23C16/4588 ,  C30B23/02 ,  C30B25/02

摘要： The barrel type susceptor for use in the semiconductor epitaxial growth is characterized in that a face plate 5 of a susceptor main body 2 having the shape of a truncated cone is partitioned into two or more in a longitudinal direction thereof, each partition being provided with a wafer mounting concave portion 6a, 6b, 6c on which a wafer is laid, and the inclination angle θa, θb, θc of a bottom face 6a1, 6b1, 6c1 of the concave portion for each partition to the vertical line is gradually decreased in each partition from the upper part to the lower part.

摘要翻译： 用于半导体外延生长的桶型感受体的特征在于，具有截头圆锥形状的基座主体2的面板5在其纵向被分隔成两个或更多个，每个隔板设置有 在其上放置晶片的晶片安装凹部6a，6b，6c以及底面6a，6b1，...的倾斜角度θa，tab， 每个分隔物的垂直线的凹部的直径的比例从上部到下部逐渐减小。

公开(公告)号：US07193294B2

公开(公告)日：2007-03-20

申请号：US11002995

申请日：2004-12-03

申请人： Reiko Yoshimura ,  Tsukasa Tada ,  Koji Izunome ,  Kazuhiko Kashima

发明人： Reiko Yoshimura ,  Tsukasa Tada ,  Koji Izunome ,  Kazuhiko Kashima

IPC分类号： H01L29/167 ,  H01L29/207 ,  H01L29/227 ,  H01L31/0288

CPC分类号： H01L21/3225 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/76254 ,  H01L21/76259 ,  H01L27/1203 ,  H01L29/7842 ,  H01L29/78603

摘要： A semiconductor substrate includes a support substrate 1 has gettering sites 10 for gettering impurity metal, an embedded insulating film 2 which is provided on the support substrate 1 and contains oxides of an element whose single bond energy to oxygen is higher than that to silicon, and a semiconductor layer (an SOI layer) 3 provided on the embedded insulating film 2.

摘要翻译： 半导体衬底包括支撑衬底1，其具有用于吸杂杂质金属的吸杂位置10，设置在支撑衬底1上并包含单氧能量高于硅的元素的氧化物的嵌入绝缘膜2，以及 设置在嵌入绝缘膜2上的半导体层（SOI层）3。

公开(公告)号：US07090932B2

公开(公告)日：2006-08-15

申请号：US10901435

申请日：2004-07-29

申请人： Yoshio Kobayashi ,  Masahiko Ichishima ,  Yuu Yokoyama

发明人： Yoshio Kobayashi ,  Masahiko Ichishima ,  Yuu Yokoyama

IPC分类号： B32B15/04

CPC分类号： C23C30/00 ,  C23C4/04 ,  C23C4/11

摘要： A plasma resistant member has a base material and a coating layer made of an Y2O3, the coating layer being formed on a surface of the base material. The coating layer has a thickness of 10 μm or more and the Y2O3 of the coating layer contains solid solution Si ranging from 100 ppm to 1000 ppm.

摘要翻译： 等离子体阻挡构件具有基材和由Y 2 O 3 N 3构成的涂层，涂层形成在基材的表面上。 涂层的厚度为10μm以上，涂层的Y 2 O 3 3 3含有100〜1000ppm范围的固溶体Si。

公开(公告)号：US20060138448A1

公开(公告)日：2006-06-29

申请号：US11298490

申请日：2005-12-12

申请人： Jun Komiyama ,  Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi

发明人： Jun Komiyama ,  Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi

IPC分类号： H01L33/00

CPC分类号： H01L29/452 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L33/007

摘要： A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 μm, a carrier concentration of 1016-1021/cm3, a hexagonal InwGaxAl1-w-xN single crystal buffer layer 4 (0≦w

摘要翻译： 背面电极6形成在化合物半导体的Si单晶衬底2的背面，其中厚度为0.05-2μm的n型3C-SiC单晶缓冲层3，载流子浓度为10 ^{16×10 21 / cm 3，六方晶系Al x 厚度为0.01-0.5μm的1-wx N单晶缓冲层4（0 <= w <1,0 <= x <1，w + x <1）和n型六方晶系 在Al 3 O 3中，单晶层5（0 <= y <1,0 3 <！ - SIPO - >，并且在六方晶系AlGaN / N单晶层5，以提供化合物 导致很少的能量损失并且允许高效率和高的击穿电压的半导体器件。}

公开(公告)号：US20060118868A1

公开(公告)日：2006-06-08

申请号：US11002995

申请日：2004-12-03

申请人： Reiko Yoshimura ,  Tsukasa Tada ,  Koji Izunome ,  Kazuhiko Kashima

发明人： Reiko Yoshimura ,  Tsukasa Tada ,  Koji Izunome ,  Kazuhiko Kashima

IPC分类号： H01L27/12 ,  H01L29/06

CPC分类号： H01L21/3225 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/76254 ,  H01L21/76259 ,  H01L27/1203 ,  H01L29/7842 ,  H01L29/78603

摘要： A semiconductor substrate includes a support substrate 1 has gettering sites 10 for gettering impurity metal, an embedded insulating film 2 which is provided on the support substrate 1 and contains oxides of an element whose single bond energy to oxygen is higher than that to silicon, and a semiconductor layer (an SOI layer) 3 provided on the embedded insulating film 2.

摘要翻译： 半导体衬底包括支撑衬底1，其具有用于吸杂杂质金属的吸杂位置10，设置在支撑衬底1上并包含单氧能量高于硅的元素的氧化物的嵌入绝缘膜2，以及 设置在嵌入绝缘膜2上的半导体层（SOI层）3。

公开(公告)号：US20060011941A1

公开(公告)日：2006-01-19

申请号：US11174610

申请日：2005-07-06

申请人： Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi ,  Jun Komiyama

发明人： Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi ,  Jun Komiyama

IPC分类号： H01L31/109

CPC分类号： G02F1/03

摘要： A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4, and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substrate for growing an electro-optical single crystal thin film which can obtain an electro-optical single crystal thin film of BTO single crystal thin film 6 etc. with a large size and a very high quality.

摘要翻译： 在Si（001）基板2上形成用于生长用于缓冲Si和BTO之间的晶格失配的两层或多层缓冲层3,4和5的电光单晶薄膜的衬底1，作为 用于生长可以获得具有大尺寸和非常高质量的BTO单晶薄膜6等的电光单晶薄膜的电光单晶薄膜的基板。

公开(公告)号：US06961516B2

公开(公告)日：2005-11-01

申请号：US10811822

申请日：2004-03-30

申请人： Eiichi Toya ,  Tomio Konn

发明人： Eiichi Toya ,  Tomio Konn

IPC分类号： F01N3/24 ,  A61M11/04 ,  A61M16/10 ,  F22B29/06

CPC分类号： A61M16/109 ,  A61M11/042 ,  A61M16/1075

摘要： A steam generating apparatus includes: a liquid tank portion 1 for storing a liquid; an evaporator portion 2 which is directly connected to the liquid tank portion, heats the liquid supplied from the liquid tank portion, and generates steam; a steam storage portion 3 which is directly connected to the evaporator portion, and stores the steam generated by the evaporator portion; a passageway 4 which is directly connected to the steam storage portion and outwardly passes the generated steam; a liquid pathway 10b which is connected to the liquid tank portion, and supplies the liquid; and a heater unit 20 which is provided on one side of the evaporator portion, and heats at least the evaporator portion. The liquid tank portion 1, the evaporator portion 2, the steam storage portion 3, the passageway 4, and the liquid pathway 10b are formed within an integral member of a translucent material.

摘要翻译： 蒸汽发生装置包括：用于储存液体的液体罐部分1; 蒸发器部分2直接连接到液罐部分，加热从液罐部分供应的液体，并产生蒸汽; 蒸汽存储部3，其直接连接到蒸发器部分，并且存储由蒸发器部分产生的蒸汽; 通道4，其直接连接到蒸汽存储部分并向外通过产生的蒸汽; 液体通道10b，其连接到液体罐部分，并供应液体; 以及加热器单元20，其设置在蒸发器部分的一侧，并且至少加热蒸发器部分。 液体罐部分1，蒸发器部分2，蒸汽存储部分3，通道4和液体通道10b形成在半透明材料的整体构件内。

公开(公告)号：US20050200055A1

公开(公告)日：2005-09-15

申请号：US11038128

申请日：2005-01-21

申请人： Hideo Uemoto ,  Kazuhide Kawai ,  Shunzo Shimai ,  Takashi Matsuyama

发明人： Hideo Uemoto ,  Kazuhide Kawai ,  Shunzo Shimai ,  Takashi Matsuyama

IPC分类号： C04B38/10 ,  C04B33/32

CPC分类号： C04B38/10 ,  C04B35/00 ,  C04B38/0045 ,  C04B38/0058

摘要： To provide a method for producing a ceramic porous material which has a high strength, though it has a high porosity, and which is excellent in permeability without dust generation. In a ceramic porous material having a three-dimensional mesh-like skeleton structure with a large number of substantially spherical adjacent cells communicating with each other via communication holes, the crystal particle size at the rim of each communication hole in the skeleton structure is provided substantially equal to the crystal particle size in the other parts.

摘要翻译： 为了提供具有高强度的陶瓷多孔材料的制造方法，尽管它具有高孔隙率，并且在不产生粉尘的情况下具有优异的渗透性。 在具有通过连通孔相互连通的大量球状相邻细胞的具有三维网状骨架结构的陶瓷多孔材料中，骨架结构中的每个连通孔的边缘处的晶粒尺寸基本上 等于其他部分的晶粒尺寸。

公开(公告)号：US20050170664A1

公开(公告)日：2005-08-04

申请号：US11038180

申请日：2005-01-21

申请人： Hisatsugu Kurita ,  Masato Igarashi ,  Takeshi Senda ,  Koji Izunome

发明人： Hisatsugu Kurita ,  Masato Igarashi ,  Takeshi Senda ,  Koji Izunome

IPC分类号： H01L21/20 ,  C30B25/18 ,  C30B29/06 ,  C30B29/52 ,  C30B1/00

CPC分类号： C30B29/06 ,  C30B25/18 ,  C30B29/52

摘要： A method for manufacturing a strained silicon wafer, having steps of a first step of preparing a single crystal silicon substrate, a second step of forming a graded SiGe layer on the substrate, the graded SiGe layer having a first Ge composition ratio increased stepwisely from 5 to 60% at atomic ratio, a third step of forming a SiGe constant composition layer on the graded SiGe layer, the SiGe constant composition layer having a Ge composition ratio substantially equal to the Ge composition ratio on a surface of the-graded SiGe layer and a fourth step of forming a strained Si layer on the SiGe constant composition layer. The second through fourth steps are performed under the reduced pressure atmosphere while the single crystal silicon substrate is rotated in a circumferential direction at a rate from 300 rpm to 1500 rpm.

摘要翻译： 一种制造应变硅晶片的方法，具有制备单晶硅衬底的第一步骤的步骤，在衬底上形成渐变SiGe层的第二步骤，具有第一Ge组成比的渐变SiGe层从5度逐步增加 至60％原子比的第三步骤，在渐变SiGe层上形成SiGe常数组成层的第三步骤，具有Ge组分比基本上等于Ge组分比的GeGe组成比在SiGe层的表面上的第三步骤;以及 在SiGe恒定组成层上形成应变Si层的第四步骤。 第二至第四步骤在减压气氛下进行，而单晶硅衬底以圆周方向以300rpm至1500rpm的速度旋转。