摘要:
A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse.In a nitride semiconductor substrate 10 having a substrate 1, a buffer layer 2 formed on one principal plane of the substrate 1, an intermediate layer 3 formed on the buffer layer 2, an electron transport layer 4 formed on the intermediate layer 3, and an electron supply layer 5 formed on the electron transport layer 4, the intermediate layer 3 has a thickness of 200 nm to 1500 nm and a carbon concentration of 5×1016 atoms/cm3 to 1×1018 atoms/cm3 and is of AlxGa1-xN (0.05≦x≦0.24), and the electron transport layer 4 has a thickness of 5 nm to 200 nm and is of AlyGa1-yN (0≦y≦0.04).
摘要翻译:提供了适用于常关型高击穿电压装置的氮化物半导体衬底和制造衬底的方法,其允许更高的阈值电压和电流崩溃的改善。 在具有衬底1的氮化物半导体衬底10中,形成在衬底1的一个主平面上的缓冲层2,形成在缓冲层2上的中间层3,形成在中间层3上的电子传输层4和 形成在电子输送层4上的电子供给层5,中间层3的厚度为200nm〜1500nm,碳浓度为5×1016原子/ cm3〜1×1018原子/ cm3,为AlxGa1-xN( 0.05≦̸ x< L; 0.24),电子传输层4的厚度为5nm〜200nm,为Al y Ga 1-y N(0&nl E; y≦̸ 0.04)。
摘要:
A technique is provided which can improve the precision of a matching point search with a plurality of images taking the same object where distant and near views coexist. A plurality of first images obtained by time-sequentially imaging an object from a first viewpoint, and a plurality of second images obtained by time-sequentially imaging the object from a second viewpoint, are obtained. Reference regions including a reference point are set respectively in the first images with the same arrangement, and comparison regions corresponding to the form of the reference regions are set respectively in the second images with the same arrangement. One reference distribution of pixel values about two-or-more-dimensional space is generated from the distributions of pixel values about the plurality of reference regions, and one comparison distribution of pixel values about two-or-more-dimensional space is generated from the distributions of pixel values about the plurality of comparison regions. Then, a matching point in the plurality of second images that corresponds to the reference point is detected by using the reference distribution of pixel values and the comparison distribution of pixel values.
摘要:
A method is provided for controlling display of three-dimensional data in a three-dimensional processor that processes three-dimensional data indicating three-dimensional position coordinates of each point on a surface of an object to be measured, the three-dimensional data being obtained by projecting measurement light onto the object and receiving measurement light reflected from the object. The method includes obtaining reliability data that are an index of reliability of three-dimensional data of said each point, enabling a user to adjust a threshold for defining a range of the reliability, and displaying, on a screen of a display, three-dimensional data corresponding to reliability falling within a range defined by the threshold adjusted by the user with the three-dimensional data displayed distinguishably from different three-dimensional data.
摘要:
A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layer 2 in which AlxGa1-xN single crystal layers (0.6≦X≦1.0) 21 containing carbon from 1×1018 atoms/cm3 to 1×1021 atoms/cm3 and AlyGa1-yN single crystal layers (0.1≦y≦0.5) 22 containing carbon from 1×1017 atoms/cm3 to 1×1021 atoms/cm3 are alternately and repeatedly stacked in order, and a nitride active layer 3 provided with an electron transport layer 31 having a carbon concentration of 5×1017 atoms/cm3 or less and an electron supply layer 32 are deposited on a Si single crystal substrate 1 in order. The carbon concentrations of the AlxGa1-xN single crystal layers 21 and that of the AlyGa1-yN single crystal layers 22 respectively decrease from the substrate 1 side towards the above-mentioned active layer 3 side. In this way, the compound semiconductor substrate is produced.
摘要翻译:一种禁止产生裂纹或翘曲的化合物半导体衬底,优选用于常闭型高击穿电压器件,其中AlxGa1-xN单晶层(0.6& NlE; X& NlE; 1.0 )含有1×1018原子/ cm 3至1×1021原子/ cm3的碳和含有1×10 17原子/ cm 3至1×1021原子/ cm 3的碳的Al y Ga 1-y N单晶层(0.1< 1lE; y≦̸ 0.5) 交替重复堆叠,并且在Si单晶衬底1上沉积具有碳浓度为5×10 17原子/ cm 3以下的电子传输层31和电子供给层32的氮化物活性层3 订购。 Al x Ga 1-x N单晶层21和Al y Ga 1-y N单晶层22的碳浓度分别从衬底1侧朝向上述有源层3侧减小。 以这种方式制造化合物半导体衬底。
摘要:
A technique is provided which can improve the precision of a matching point search with a plurality of images taking the same object where distant and near views coexist. A plurality of first images obtained by time-sequentially imaging an object from a first viewpoint, and a plurality of second images obtained by time-sequentially imaging the object from a second viewpoint, are obtained. Reference regions including a reference point are set respectively in the first images with the same arrangement, and comparison regions corresponding to the form of the reference regions are set respectively in the second images with the same arrangement. One reference distribution of pixel values about two-or-more-dimensional space is generated from the distributions of pixel values about the plurality of reference regions, and one comparison distribution of pixel values about two-or-more-dimensional space is generated from the distributions of pixel values about the plurality of comparison regions. Then, a matching point in the plurality of second images that corresponds to the reference point is detected by using the reference distribution of pixel values and the comparison distribution of pixel values.
摘要:
A three-dimensional measurement method is provided for measuring an object shape in a non-contact manner by using a non-contact sensor and a sensor moving mechanism that changes a position and a posture of the sensor and can operate by numerical control, moving the non-contact sensor in accordance with measurement path information indicating plural positions and postures of the sensor at the respective positions. The measurement path information is set in advance by teaching. The method includes performing preliminary three-dimensional measurement of the object in accordance with preliminary measurement path information, using shape data obtained by the preliminary three-dimensional measurement and shape data of an imaginary object as a measurement target in the teaching to detect positioning error between the object and the imaginary object, modifying the measurement path information depending on the detected positioning error, and performing three-dimensional measurement of the object in accordance with the modified measurement path information.
摘要:
A three-dimensional shape measuring system is provided with a measuring unit having a three-dimensional measurement range and adapted to measure the three-dimensional shape of a measurement object in a noncontact manner, a measurement range shifting unit for shifting the position of the measurement range of the measuring unit, a shape calculating unit for calculating the overall three-dimensional shape of the measurement object from a plurality of measurement data obtained by shifting the measurement range relative to the measurement object, and a judging unit for setting judgment areas in specified peripheral areas within the measurement range and judging the presence or absence of any unmeasured area of the measurement object outside the measurement range based on measurement data corresponding to the judgment areas. The measurement range shifting unit shifts the position of the measurement range in a direction toward the unmeasured area when the presence of the unmeasured area is judged by the judging unit.
摘要:
A three-dimensional shape measuring system includes: a light projecting/receiving apparatus which causes a light receiver to receive light reflected on a surface of a measurement object onto a light receiving surface thereof at a predetermined cycle multiple times, while changing a projecting direction of the light; and a measuring apparatus for measuring a three-dimensional shape of the measurement object, utilizing light receiving data. The measuring apparatus includes: a light receiving time setter for setting a light receiving time in each cycle with respect to each of light receiving areas constituting the light receiving surface; a data converter for converting an output value representing the light receiving data obtained in each cycle into an output value standardized with respect to the light receiving time in each cycle, if the light receiving times are different in the cycles; a projection timing acquirer for acquiring a projection timing at which the light receiving amount of each light receiving area is maximum; and a position acquirer for acquiring a position of a measurement point on the surface of the measurement object corresponding to each light receiving area.
摘要:
A three-dimensional shape measuring system is provided with a measuring unit having a three-dimensional measurement range and adapted to measure the three-dimensional shape of a measurement object in a noncontact manner, a measurement range shifting unit for shifting the position of the measurement range of the measuring unit, a shape calculating unit for calculating the overall three-dimensional shape of the measurement object from a plurality of measurement data obtained by shifting the measurement range relative to the measurement object, and a judging unit for setting judgment areas in specified peripheral areas within the measurement range and judging the presence or absence of any unmeasured area of the measurement object outside the measurement range based on measurement data corresponding to the judgment areas. The measurement range shifting unit shifts the position of the measurement range in a direction toward the unmeasured area when the presence of the unmeasured area is judged by the judging unit.
摘要:
A substrate for compound semiconductor device and a compound semiconductor device using the substrate are provided which allow a breakdown voltage to be high, cause little energy loss, and are suitably used for a high-electron mobility transistor etc. An n-type 3C—SiC single crystal buffer layer 3 having a carrier concentration of 1016-1021/cm3, a hexagonal GaxAl1-xN single crystal buffer layer (0≦x
摘要翻译:提供了一种化合物半导体器件的基板和使用该基板的化合物半导体器件,其允许击穿电压高,导致很少的能量损失,并且适合用于高电子迁移率晶体管等。n型3C-SiC 载流子浓度为10-16 / 21/3/3的单晶缓冲层3,六方晶系 > 1×1×N单晶缓冲层(0 <= x <1)4,n型六方晶系Al 1-y < 载流子浓度为10〜10/10/10/10以上的SUB> N单晶层(0.2 <= y <= 1)5 ,和n型六方晶系Al 1-z N单晶载体供给层(0≤z≤0.8,0.2≤yz≤1) )6具有载流子浓度为10 11 -10 16 / cm 3的物质依次层叠在n型Si单晶衬底2上 具有晶面取向{111}和载体浓度为10 16 -10 21 SUP> / cm 3。 在上述基板2的背面形成有背面电极7,在上述载体供给层6的表面上形成有表面电极8。