Invention Application
- Patent Title: MULTI-STEP ANNEAL OF THIN FILMS FOR FILM DENSIFICATION AND IMPROVED GAP-FILL
- Patent Title (中): 薄膜薄膜多层退化和改良胶圈
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Application No.: US11697105Application Date: 2007-04-05
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Publication No.: US20070212847A1Publication Date: 2007-09-13
- Inventor: Nitin Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali Forstner , Rong Pan
- Applicant: Nitin Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali Forstner , Rong Pan
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method of annealing a substrate that has a trench containing a dielectric material formed on a silicon nitride layer between the dielectric material and the substrate, where the method includes annealing the substrate at a first temperature of about 800° C. or more in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen.
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