公开(公告)号：US20070212847A1

公开(公告)日：2007-09-13

申请号：US11697105

申请日：2007-04-05

申请人： Nitin Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali Forstner ,  Rong Pan

发明人： Nitin Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali Forstner ,  Rong Pan

IPC分类号： H01L21/76

CPC分类号： H01L21/76224 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/31612 ,  H01L21/67115

摘要： A method of annealing a substrate that has a trench containing a dielectric material formed on a silicon nitride layer between the dielectric material and the substrate, where the method includes annealing the substrate at a first temperature of about 800° C. or more in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen.

摘要翻译： 一种退火衬底的方法，该衬底具有包含形成在介电材料和衬底之间的氮化硅层上的电介质材料的沟槽，其中所述方法包括在第一温度为约800℃或更高的第一温度下退火衬底 包含含氧气体的气氛，并在不含氧气的第二气氛中在大约800℃至大约1400℃的第二温度下退火所述基板。

公开(公告)号：US20070000897A1

公开(公告)日：2007-01-04

申请号：US11423651

申请日：2006-06-12

申请人： Nitin Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali Forstner ,  Rong Pan

发明人： Nitin Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali Forstner ,  Rong Pan

IPC分类号： H01L21/324 ,  H05B3/00

CPC分类号： H01L21/324 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/67115 ,  H01L21/76224 ,  H01L21/76283

摘要： A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.

摘要翻译： 一种退火包括含有电介质材料的沟槽的衬底的方法，所述方法包括在包含含氧气体的第一气氛中在大约200℃至大约800℃的第一温度下对衬底退火，以及退火衬底 在约800℃至约1400℃的第二温度下在不含氧气的第二气氛中。 另外，包括含有电介质材料的沟槽的衬底的退火方法，该方法包括在含氧气体存在下，在约400℃至约800℃的第一温度下退火衬底， 含氧气体离开衬底，并将衬底升高至约900℃至约1100℃的第二温度，以在缺氧的气氛中进一步对衬底进行退火。

公开(公告)号：US20060030165A1

公开(公告)日：2006-02-09

申请号：US10990002

申请日：2004-11-16

申请人： Nitin Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali Forstner ,  Rong Pan

发明人： Nitin Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali Forstner ,  Rong Pan

IPC分类号： H01L21/324

CPC分类号： H01L21/324 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/67115 ,  H01L21/76224 ,  H01L21/76283

摘要： A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.

摘要翻译： 一种退火包括含有电介质材料的沟槽的衬底的方法，所述方法包括在包含含氧气体的第一气氛中在大约200℃至大约800℃的第一温度下对衬底退火，以及退火衬底 在约800℃至约1400℃的第二温度下在不含氧气的第二气氛中。 另外，包括含有电介质材料的沟槽的衬底的退火方法，该方法包括在含氧气体存在下，在约400℃至约800℃的第一温度下退火衬底， 含氧气体离开衬底，并将衬底升高至约900℃至约1100℃的第二温度，以在缺氧的气氛中进一步对衬底进行退火。

公开(公告)号：US20050142895A1

公开(公告)日：2005-06-30

申请号：US11018381

申请日：2004-12-20

申请人： Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang ,  Zheng Yuan

发明人： Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang ,  Zheng Yuan

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23C16/00 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45512 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/52

摘要： A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.

摘要翻译： 一种形成氧化硅层的方法，其中该方法包括提供含硅前体连续流入容纳衬底的室的步骤，其中含硅前体选自TMOS，TEOS，OMTS，OMCTS， 和TOMCATS。 该方法还可以包括以下步骤：向室提供氧化前体流，并使含硅前体和氧化前体之间的反应形成氧化硅层。 该方法可以进一步包括随着时间的推移改变硅含量的前体：氧化前体流入室中以改变氧化硅在衬底上的沉积速率。

公开(公告)号：US07642171B2

公开(公告)日：2010-01-05

申请号：US10990002

申请日：2004-11-16

申请人： Nitin K. Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali J. L. Forstner ,  Rong Pan

发明人： Nitin K. Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali J. L. Forstner ,  Rong Pan

IPC分类号： H01L21/76

CPC分类号： H01L21/324 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/67115 ,  H01L21/76224 ,  H01L21/76283

摘要： A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.

摘要翻译： 一种退火包括含有电介质材料的沟槽的衬底的方法，所述方法包括在包含含氧气体的第一气氛中在大约200℃至大约800℃的第一温度下对衬底退火，以及退火衬底 在约800℃至约1400℃的第二温度下在不含氧气的第二气氛中。 另外，包括含有电介质材料的沟槽的衬底的退火方法，该方法包括在含氧气体存在下，在约400℃至约800℃的第一温度下退火衬底， 含氧气体离开衬底，并将衬底升高至约900℃至约1100℃的第二温度，以在缺氧的气氛中进一步对衬底进行退火。

公开(公告)号：US20060046427A1

公开(公告)日：2006-03-02

申请号：US11213612

申请日：2005-08-26

申请人： Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang

发明人： Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang

IPC分类号： H01L21/76

CPC分类号： H01L21/76837 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76224

摘要： A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.

摘要翻译： 一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法。 该方法包括将含硅前体流入容纳基底的处理室，将氧化气体流入室中，并在处理室中提供含羟基的前体。 该方法还包括使含硅前体，氧化气体和含羟基的前体反应以在沟槽中形成电介质材料。 流入室中的含硅前体与氧化气体的比例随时间增加以改变电介质材料的沉积速率。

公开(公告)号：US07456116B2

公开(公告)日：2008-11-25

申请号：US11018381

申请日：2004-12-20

申请人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang ,  Zheng Yuan

发明人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang ,  Zheng Yuan

IPC分类号： H01L21/31

CPC分类号： C23C16/45512 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/52

摘要： A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.

摘要翻译： 一种形成氧化硅层的方法，其中该方法包括提供含硅前体连续流入容纳衬底的室的步骤，其中含硅前驱体选自TMOS，TEOS，OMTS，OMCTS， 和TOMCATS。 该方法还可以包括以下步骤：向室提供氧化前体流，并使含硅前体和氧化前体之间的反应形成氧化硅层。 该方法可以进一步包括随着时间的推移改变硅含量的前体：氧化前体流入室中以改变氧化硅在衬底上的沉积速率。

公开(公告)号：US20050136684A1

公开(公告)日：2005-06-23

申请号：US10746695

申请日：2003-12-23

申请人： Kevin Mukai ,  Kimberly Branshaw ,  Zheng Yuan ,  Xinyun Xia ,  Xiaolin Chen ,  Dongqing Li ,  M. Karim ,  Van Ton ,  Cary Ching ,  Steve Ghanayeim ,  Nitin Ingle

发明人： Kevin Mukai ,  Kimberly Branshaw ,  Zheng Yuan ,  Xinyun Xia ,  Xiaolin Chen ,  Dongqing Li ,  M. Karim ,  Van Ton ,  Cary Ching ,  Steve Ghanayeim ,  Nitin Ingle

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/505 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/045 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76224 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/76837

摘要： A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.

摘要翻译： 可以单独地或组合地采用各种技术来改善通过化学气相沉积（CVD）形成的电介质材料的间隙填充性能。 在一种方法中，使用次大气化学气相沉积（SACVD）沉积第一介电层，随后通过高密度等离子体化学气相沉积（HDP-CVD）或等离子体增强化学气相沉积（PECVD）沉积的第二介电层， 。 在另一种方法中，在从远程等离子体室流入处理室的反应性离子物质的存在下沉积SACVD介电层，该处理室在沉积过程中执行蚀刻。 在另一种方法中，可以使用SACVD与在高温下沉积的氧化物层组合来填充高方位沟槽。

公开(公告)号：US20080115726A1

公开(公告)日：2008-05-22

申请号：US11941793

申请日：2007-11-16

申请人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang

发明人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang

IPC分类号： B05C11/00

CPC分类号： H01L21/76837 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76224

摘要： A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.

摘要翻译： 一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法。 该方法包括将含硅前体流入容纳基底的处理室，将氧化气体流入室中，并在处理室中提供含羟基的前体。 该方法还包括使含硅前体，氧化气体和含羟基的前体反应以在沟槽中形成电介质材料。 流入室中的含硅前体与氧化气体的比例随时间增加以改变电介质材料的沉积速率。

公开(公告)号：US07335609B2

公开(公告)日：2008-02-26

申请号：US11213612

申请日：2005-08-26

申请人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang

发明人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang

IPC分类号： H01L21/31 ,  H01L21/76

CPC分类号： H01L21/76837 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76224

摘要： A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.

摘要翻译： 一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法。 该方法包括将含硅前体流入容纳基底的处理室，将氧化气体流入室中，并在处理室中提供含羟基的前体。 该方法还包括使含硅前体，氧化气体和含羟基的前体反应以在沟槽中形成电介质材料。 流入室中的含硅前体与氧化气体的比例随时间增加以改变电介质材料的沉积速率。