发明申请
- 专利标题： Method for making a thermally stable silicide
- 专利标题（中）： 制造耐热硅化物的方法
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申请号： US11389309申请日： 2006-03-27
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公开(公告)号： US20070221993A1公开(公告)日： 2007-09-27
- 发明人: Shau-Lin Shue , Chen-Hua Yu , Cheng-Tung Lin , Chii-Ming Wu , Shih-Wei Chou , Gin Wang , Cp Lo , Chih-W Chang
- 申请人： Shau-Lin Shue , Chen-Hua Yu , Cheng-Tung Lin , Chii-Ming Wu , Shih-Wei Chou , Gin Wang , Cp Lo , Chih-W Chang
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L27/01 ; H01L31/0392
摘要：
A semiconductor device and method of manufacturing are provided that include forming an alloy layer having the formula MbX over a silicon-containing substrate, where Mb is a metal and X is an alloying additive, the alloy layer being annealed to form a metal alloy silicide layer on the gate region and in active regions of the semiconductor device.
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