公开(公告)号：US20100151639A1

公开(公告)日：2010-06-17

申请号：US12712518

申请日：2010-02-25

Applicant: Shau-Lin Shue ,  Chen-Hua Yu ,  Cheng-Tung Lin ,  Chii-Ming Wu ,  Shih-Wei Chou ,  Gin Jei Wang ,  CP Lo ,  Chih-Wei Chang

Inventor： Shau-Lin Shue ,  Chen-Hua Yu ,  Cheng-Tung Lin ,  Chii-Ming Wu ,  Shih-Wei Chou ,  Gin Jei Wang ,  CP Lo ,  Chih-Wei Chang

IPC: H01L21/336 ,  H01L21/28

CPC classification number: H01L29/665 ,  H01L21/76243 ,  H01L29/785

Abstract: Provided is a method of fabrication a semiconductor device that includes providing a semiconductor substrate, forming a gate structure over the substrate, the gate structure including a gate dielectric and a gate electrode disposed over the gate dielectric, forming source/drain regions in the semiconductor substrate at either side of the gate structure, forming a metal layer over the semiconductor substrate and the gate structure, the metal layer including a refractory metal layer or a refractory metal compound layer; forming an alloy layer over the metal layer; and performing an annealing thereby forming metal alloy silicides over the gate structure and the source/drain regions, respectively.

Abstract translation: 提供一种制造半导体器件的方法，其包括提供半导体衬底，在衬底上形成栅极结构，栅极结构包括栅极电介质和设置在栅极电介质上的栅电极，在半导体衬底中形成源极/漏极区域 在栅极结构的任一侧，在半导体衬底和栅极结构之上形成金属层，金属层包括难熔金属层或难熔金属化合物层; 在所述金属层上形成合金层; 并进行退火，从而分别在栅极结构和源极/漏极区域上形成金属合金硅化物。

公开(公告)号：US20070221993A1

公开(公告)日：2007-09-27

申请号：US11389309

申请日：2006-03-27

Applicant: Shau-Lin Shue ,  Chen-Hua Yu ,  Cheng-Tung Lin ,  Chii-Ming Wu ,  Shih-Wei Chou ,  Gin Wang ,  Cp Lo ,  Chih-W Chang

Inventor： Shau-Lin Shue ,  Chen-Hua Yu ,  Cheng-Tung Lin ,  Chii-Ming Wu ,  Shih-Wei Chou ,  Gin Wang ,  Cp Lo ,  Chih-W Chang

IPC: H01L27/12 ,  H01L27/01 ,  H01L31/0392

CPC classification number: H01L29/665 ,  H01L21/76243 ,  H01L29/785

Abstract: A semiconductor device and method of manufacturing are provided that include forming an alloy layer having the formula MbX over a silicon-containing substrate, where Mb is a metal and X is an alloying additive, the alloy layer being annealed to form a metal alloy silicide layer on the gate region and in active regions of the semiconductor device.

Abstract translation: 提供一种半导体器件和制造方法，包括在含硅衬底上形成具有式MbX的合金层，其中Mb是金属，X是合金添加剂，合金层被退火以形成金属合金硅化物层 在栅极区域和半导体器件的有源区中。