Invention Application
US20070228450A1 FLASH MEMORY DEVICE WITH ENLARGED CONTROL GATE STRUCTURE, AND METHODS OF MAKING SAME
审中-公开
具有扩大控制门结构的闪存存储器件及其制造方法
- Patent Title: FLASH MEMORY DEVICE WITH ENLARGED CONTROL GATE STRUCTURE, AND METHODS OF MAKING SAME
- Patent Title (中): 具有扩大控制门结构的闪存存储器件及其制造方法
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Application No.: US11277823Application Date: 2006-03-29
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Publication No.: US20070228450A1Publication Date: 2007-10-04
- Inventor: Di Li , Chandra Mouli
- Applicant: Di Li , Chandra Mouli
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/8238
Abstract:
Disclosed is a flash memory device with an enlarged control gate structure, and various methods of make same. In one illustrative embodiment, the device includes a plurality of floating gate structures formed above a semiconducting substrate, an isolation structure positioned between each of the plurality of floating gate structures and a control gate structure comprising a plurality of enlarged end portions, each of the enlarged end portions being positioned between adjacent floating gate structures.
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