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    Semiconductor devices and electronic systems comprising floating gate transistors
    1.
    发明授权
    Semiconductor devices and electronic systems comprising floating gate transistors 有权
    包括浮栅晶体管的半导体器件和电子系统

    公开(公告)号：US08686487B2

    公开(公告)日：2014-04-01

    申请号：US11763335

    申请日：2007-06-14

    申请人： Gurtej Sandhu ,  Chandra Mouli ,  Di Li

    发明人： Gurtej Sandhu ,  Chandra Mouli ,  Di Li

    IPC分类号： H01L29/788 ,  H01L21/336

    CPC分类号： H01L29/788 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/42376 ,  H01L29/66825 ,  H01L29/7883 ,  H01L51/5253 ,  H01L51/56

    摘要： Semiconductor devices include one or more transistors having a floating gate and a control gate. In at least one embodiment, the floating gate comprises an intermediate portion extending between two end portions. The intermediate portion has an average cross-sectional area less than one or both of the end portions. In some embodiments, the intermediate portion may comprise a single nanowire. In additional embodiments, semiconductor devices have one or more transistors having a control gate and a floating gate in which a surface of the control gate opposes a lateral side surface of a floating gate that defines a recess in the floating gate. Electronic systems include such semiconductor devices. Methods of forming semiconductor devices include, for example, forming a floating gate having an intermediate portion extending between two end portions, and configuring the intermediate portion to have an average cross-sectional area less than one or both of the end portions.

    摘要翻译： 半导体器件包括具有浮置栅极和控制栅极的一个或多个晶体管。 在至少一个实施例中，浮动门包括在两个端部之间延伸的中间部分。 中间部分具有小于一个或两个端部的平均横截面面积。 在一些实施例中，中间部分可以包括单个纳米线。 在另外的实施例中，半导体器件具有一个或多个具有控制栅极和浮置栅极的晶体管，其中控制栅极的表面与浮置栅极的限定了浮动栅极中的凹部的横向侧表面相对。 电子系统包括这样的半导体器件。 形成半导体器件的方法包括例如形成具有在两个端部之间延伸的中间部分的浮动栅极，并且将中间部分构造成具有小于一个或两个端部的平均横截面积。

    SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS COMPRISING FLOATING GATE TRANSISTORS AND METHODS OF FORMING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS COMPRISING FLOATING GATE TRANSISTORS AND METHODS OF FORMING THE SAME 有权
    包含浮动栅极晶体管的半导体器件和电子系统及其形成方法

    公开(公告)号：US20080308858A1

    公开(公告)日：2008-12-18

    申请号：US11763335

    申请日：2007-06-14

    申请人： Gurtej Sandhu ,  Chandra Mouli ,  Di Li

    发明人： Gurtej Sandhu ,  Chandra Mouli ,  Di Li

    IPC分类号： H01L29/788 ,  H01L21/336

    CPC分类号： H01L29/788 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/42376 ,  H01L29/66825 ,  H01L29/7883 ,  H01L51/5253 ,  H01L51/56

    摘要： Semiconductor devices include one or more transistors having a floating gate and a control gate. In at least one embodiment, the floating gate comprises an intermediate portion extending between two end portions. The intermediate portion has an average cross-sectional area less than one or both of the end portions. In some embodiments, the intermediate portion may comprise a single nanowire. In additional embodiments, semiconductor devices have one or more transistors having a control gate and a floating gate in which a surface of the control gate opposes a lateral side surface of a floating gate that defines a recess in the floating gate. Electronic systems include such semiconductor devices. Methods of forming semiconductor devices include, for example, forming a floating gate having an intermediate portion extending between two end portions, and configuring the intermediate portion to have an average cross-sectional area less than one or both of the end portions.

    摘要翻译： 半导体器件包括具有浮置栅极和控制栅极的一个或多个晶体管。 在至少一个实施例中，浮动门包括在两个端部之间延伸的中间部分。 中间部分具有小于一个或两个端部的平均横截面面积。 在一些实施例中，中间部分可以包括单个纳米线。 在另外的实施例中，半导体器件具有一个或多个具有控制栅极和浮置栅极的晶体管，其中控制栅极的表面与浮置栅极的限定了浮动栅极中的凹部的横向侧表面相对。 电子系统包括这样的半导体器件。 形成半导体器件的方法包括例如形成具有在两个端部之间延伸的中间部分的浮动栅极，并且将中间部分构造成具有小于一个或两个端部的平均横截面积。

    Floating body field-effect transistors, and methods of forming floating body field-effect transistors
    3.
    发明授权
    Floating body field-effect transistors, and methods of forming floating body field-effect transistors 有权
    浮体场效应晶体管，以及形成浮体场效应晶体管的方法

    公开(公告)号：US08395214B2

    公开(公告)日：2013-03-12

    申请号：US13088531

    申请日：2011-04-18

    申请人： Jun Liu ,  Di Li ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch

    发明人： Jun Liu ,  Di Li ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch

    IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392 ,  H01L23/02

    CPC分类号： H01L27/1203 ,  H01L27/10802 ,  H01L29/66477 ,  H01L29/7841 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In one embodiment, a floating body field-effect transistor includes a pair of source/drain regions having a floating body channel region received therebetween. The source/drain regions and the floating body channel region are received over an insulator. A gate electrode is proximate the floating body channel region. A gate dielectric is received between the gate electrode and the floating body channel region. The floating body channel region has a semiconductor SixGe(1-x)-comprising region. The floating body channel region has a semiconductor silicon-comprising region received between the semiconductor SixGe(1-x)-comprising region and the gate dielectric. The semiconductor SixGe(1-x)-comprising region has greater quantity of Ge than any quantity of Ge within the semiconductor silicon-comprising region. Other embodiments are contemplated, including methods of forming floating body field-effect transistors.

    摘要翻译： 在一个实施例中，浮体场效应晶体管包括一对在其间容纳浮体通道区的源/漏区。 源极/漏极区域和浮体沟道区域被接纳在绝缘体上。 栅电极靠近浮体通道区域。 门电介质被接收在栅电极和浮体沟道区之间。 浮体通道区域具有半导体SixGe（1-x）区域。 浮体通道区域具有容纳在半导体SixGe（1-x）区域和栅极电介质之间的半导体硅包覆区域。 半导体SixGe（1-x）含量区域在含半导体硅的区域内具有比任何Ge量更大的Ge量。 考虑了其他实施例，包括形成浮体场效应晶体管的方法。

    FLASH MEMORY DEVICE WITH ENLARGED CONTROL GATE STRUCTURE, AND METHODS OF MAKING SAME
    4.
    发明申请
    FLASH MEMORY DEVICE WITH ENLARGED CONTROL GATE STRUCTURE, AND METHODS OF MAKING SAME 审中-公开
    具有扩大控制门结构的闪存存储器件及其制造方法

    公开(公告)号：US20070228450A1

    公开(公告)日：2007-10-04

    申请号：US11277823

    申请日：2006-03-29

    申请人： Di Li ,  Chandra Mouli

    发明人： Di Li ,  Chandra Mouli

    IPC分类号： H01L29/788 ,  H01L21/8238

    CPC分类号： H01L27/11521 ,  H01L27/115

    摘要： Disclosed is a flash memory device with an enlarged control gate structure, and various methods of make same. In one illustrative embodiment, the device includes a plurality of floating gate structures formed above a semiconducting substrate, an isolation structure positioned between each of the plurality of floating gate structures and a control gate structure comprising a plurality of enlarged end portions, each of the enlarged end portions being positioned between adjacent floating gate structures.

    摘要翻译： 公开了一种具有扩大的控制栅极结构的闪速存储器件，以及各种制造方法。 在一个说明性实施例中，该器件包括形成在半导体衬底之上的多个浮动栅极结构，位于多个浮动栅极结构中的每一个之间的隔离结构和包括多个扩大端部的控制栅极结构， 端部位于相邻的浮栅结构之间。

    Floating Body Field-Effect Transistors, And Methods Of Forming Floating Body Field-Effect Transistors
    5.
    发明申请
    Floating Body Field-Effect Transistors, And Methods Of Forming Floating Body Field-Effect Transistors 有权
    浮体场效应晶体管，以及形成浮体场效应晶体管的方法

    公开(公告)号：US20110193165A1

    公开(公告)日：2011-08-11

    申请号：US13088531

    申请日：2011-04-18

    申请人： Jun Liu ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch ,  Di Li

    发明人： Jun Liu ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch ,  Di Li

    IPC分类号： H01L27/12 ,  H01L21/336

    CPC分类号： H01L27/1203 ,  H01L27/10802 ,  H01L29/66477 ,  H01L29/7841 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In one embodiment, a floating body field-effect transistor includes a pair of source/drain regions having a floating body channel region received therebetween. The source/drain regions and the floating body channel region are received over an insulator. A gate electrode is proximate the floating body channel region. A gate dielectric is received between the gate electrode and the floating body channel region. The floating body channel region has a semiconductor SixGe(1-x)-comprising region. The floating body channel region has a semiconductor silicon-comprising region received between the semiconductor SixGe(1-x)-comprising region and the gate dielectric. The semiconductor SixGe(1-x)-comprising region has greater quantity of Ge than any quantity of Ge within the semiconductor silicon-comprising region. Other embodiments are contemplated, including methods of forming floating body field-effect transistors.

    摘要翻译： 在一个实施例中，浮体场效应晶体管包括一对在其间容纳浮体通道区的源/漏区。 源极/漏极区域和浮体沟道区域被接纳在绝缘体上。 栅电极靠近浮体通道区域。 门电介质被接收在栅电极和浮体沟道区之间。 浮体通道区域具有半导体SixGe（1-x）区域。 浮体通道区域具有容纳在半导体SixGe（1-x）区域和栅极电介质之间的半导体硅包覆区域。 半导体SixGe（1-x）含量区域在含半导体硅的区域内具有比任何Ge量更大的Ge量。 考虑了其他实施例，包括形成浮体场效应晶体管的方法。

    Floating body field-effect transistors, and methods of forming floating body field-effect transistors
    6.
    发明授权
    Floating body field-effect transistors, and methods of forming floating body field-effect transistors 有权
    浮体场效应晶体管，以及形成浮体场效应晶体管的方法

    公开(公告)号：US07948008B2

    公开(公告)日：2011-05-24

    申请号：US11925573

    申请日：2007-10-26

    申请人： Jun Liu ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch ,  Di Li

    发明人： Jun Liu ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch ,  Di Li

    IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/01 ,  H01L27/12 ,  H01L31/0392

    CPC分类号： H01L27/1203 ,  H01L27/10802 ,  H01L29/66477 ,  H01L29/7841 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In one embodiment, a floating body field-effect transistor includes a pair of source/drain regions having a floating body channel region received therebetween. The source/drain regions and the floating body channel region are received over an insulator. A gate electrode is proximate the floating body channel region. A gate dielectric is received between the gate electrode and the floating body channel region. The floating body channel region has a semiconductor SixGe(1-x)-comprising region. The floating body channel region has a semiconductor silicon-comprising region received between the semiconductor SixGe(1-x)-comprising region and the gate dielectric. The semiconductor SixGe(1-x)-comprising region has greater quantity of Ge than any quantity of Ge within the semiconductor silicon-comprising region. Other embodiments are contemplated, including methods of forming floating body field-effect transistors.

    摘要翻译： 在一个实施例中，浮体场效应晶体管包括一对在其间容纳浮体通道区的源/漏区。 源极/漏极区域和浮体沟道区域被接纳在绝缘体上。 栅电极靠近浮体通道区域。 门电介质被接收在栅电极和浮体沟道区之间。 浮体通道区域具有半导体SixGe（1-x）区域。 浮体通道区域具有容纳在半导体SixGe（1-x）区域和栅极电介质之间的半导体硅包覆区域。 半导体SixGe（1-x）含量区域在含半导体硅的区域内具有比任何Ge量更大的Ge量。 考虑了其他实施例，包括形成浮体场效应晶体管的方法。

    Floating Body Field-Effect Transistors, and Methods of Forming Floating Body Field-Effect Transistors
    7.
    发明申请
    Floating Body Field-Effect Transistors, and Methods of Forming Floating Body Field-Effect Transistors 有权
    浮体场效应晶体管，以及形成浮体场效应晶体管的方法

    公开(公告)号：US20090108292A1

    公开(公告)日：2009-04-30

    申请号：US11925573

    申请日：2007-10-26

    申请人： Jun Liu ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch ,  Di Li

    发明人： Jun Liu ,  Michael P. Violette ,  Chandra Mouli ,  Howard Kirsch ,  Di Li

    IPC分类号： H01L29/778 ,  H01L21/336 ,  H01L29/786

    CPC分类号： H01L27/1203 ,  H01L27/10802 ,  H01L29/66477 ,  H01L29/7841 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In one embodiment, a floating body field-effect transistor includes a pair of source/drain regions having a floating body channel region received therebetween. The source/drain regions and the floating body channel region are received over an insulator. A gate electrode is proximate the floating body channel region. A gate dielectric is received between the gate electrode and the floating body channel region. The floating body channel region has a semiconductor SixGe(1-x)-comprising region. The floating body channel region has a semiconductor silicon-comprising region received between the semiconductor SixGe(1-x)-comprising region and the gate dielectric. The semiconductor SixGe(1-x)-comprising region has greater quantity of Ge than any quantity of Ge within the semiconductor silicon-comprising region. Other embodiments are contemplated, including methods of forming floating body field-effect transistors.

    摘要翻译： 在一个实施例中，浮体场效应晶体管包括一对在其间容纳浮体通道区的源/漏区。 源极/漏极区域和浮体沟道区域被接纳在绝缘体上。 栅电极靠近浮体通道区域。 门电介质被接收在栅电极和浮体沟道区之间。 浮体通道区域具有半导体SixGe（1-x）区域。 浮体通道区域具有容纳在半导体SixGe（1-x）区域和栅极电介质之间的半导体硅包覆区域。 半导体SixGe（1-x）含量区域在含半导体硅的区域内具有比任何Ge量更大的Ge量。 考虑了其他实施例，包括形成浮体场效应晶体管的方法。

    Heavy Oil Catalytic Cracking Catalyst and Preparation Method Therefor
    10.
    发明申请
    Heavy Oil Catalytic Cracking Catalyst and Preparation Method Therefor 有权
    重油催化裂化催化剂及其制备方法

    公开(公告)号：US20150080209A1

    公开(公告)日：2015-03-19

    申请号：US14364536

    申请日：2012-04-13

    申请人： Xionghou Gao ,  Haitao Zhang ,  Zhengguo Tan ,  Di Li ,  Dong Ji ,  Hongchang Duan ,  Chenxi Zhang

    发明人： Xionghou Gao ,  Haitao Zhang ,  Zhengguo Tan ,  Di Li ,  Dong Ji ,  Hongchang Duan ,  Chenxi Zhang

    IPC分类号： B01J29/80

    CPC分类号： B01J29/80 ,  B01J29/088 ,  B01J29/40 ,  B01J35/002 ,  B01J35/023 ,  B01J35/08 ,  B01J35/10 ,  B01J35/1085 ,  B01J35/109 ,  B01J37/0018 ,  B01J37/0045 ,  B01J37/30 ,  B01J2029/062 ,  B01J2229/186 ,  B01J2229/37 ,  B01J2229/40 ,  B01J2229/42 ,  C01B39/026 ,  C01B39/24

    摘要： The present invention relates to a heavy oil catalytic cracking catalyst and preparation method thereof. The catalyst comprises 2 to 50% by weight of an ultra-stable rare earth type Y molecular sieve, 0.5 to 30% by weight of one or more other molecular sieves, 0.5 to 70% by weight of clay, 1.0 to 65% by weight of high-temperature-resistant inorganic oxides, and 0.01 to 12.5% by weight of rare earth oxide. The ultra-stable rare earth type Y molecular sieve is obtained as follows: the raw material, NaY molecular sieve, is subjected to a rare earth exchange and a dispersing pre-exchange, and the molecular sieve slurry is filtered, washed and subjected to a first calcination to produce a “one-exchange one-calcination” rare earth sodium Y molecular sieve, wherein the order of the rare earth exchange and the dispersing pre-exchange is not limited; and the “one-exchange one-calcination” rare earth sodium Y molecular sieve is further subjected to ammonium salt exchange for sodium reduction and a second calcination. The catalyst provided in the present invention is characteristic in its high heavy-oil-conversion capacity, a high total liquid yield and a high light oil yield.

    摘要翻译： 本发明涉及一种重油催化裂化催化剂及其制备方法。 该催化剂包含2至50重量％的超稳定稀土型Y分子筛，0.5至30重量％的一种或多种其它分子筛，0.5至70重量％的粘土，1.0至65重量％ 的耐高温无机氧化物和0.01〜12.5重量％的稀土氧化物。 超稳定型稀土类Y分子筛的制备如下：将原料NaY分子筛进行稀土交换和分散预交换，并将分子筛浆料过滤，洗涤并进行 首先煅烧产生“一次一次煅烧”稀土钠Y分子筛，其中稀土交换和分散预交换的顺序不受限制; “一交一一”稀土钠Y分子筛进一步进行铵盐交换钠还原和二次煅烧。 本发明提供的催化剂具有高重油转化能力，总液体产率高，轻油收率高的特点。