发明申请
US20070228482A1 TECHNIQUE FOR PROVIDING STRESS SOURCES IN TRANSISTORS IN CLOSE PROXIMITY TO A CHANNEL REGION BY RECESSING DRAIN AND SOURCE REGIONS
有权
通过记录泄漏和源区域向通道区域提供紧密接近的晶体管中的应力源的技术
- 专利标题： TECHNIQUE FOR PROVIDING STRESS SOURCES IN TRANSISTORS IN CLOSE PROXIMITY TO A CHANNEL REGION BY RECESSING DRAIN AND SOURCE REGIONS
- 专利标题（中）： 通过记录泄漏和源区域向通道区域提供紧密接近的晶体管中的应力源的技术
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申请号： US11558006申请日： 2006-11-09
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公开(公告)号： US20070228482A1公开(公告)日： 2007-10-04
- 发明人: Andy Wei , Thorsten Kammler , Jan Hoentschel , Manfred Horstmann , Peter Javorka , Joe Bloomquist
- 申请人： Andy Wei , Thorsten Kammler , Jan Hoentschel , Manfred Horstmann , Peter Javorka , Joe Bloomquist
- 优先权： DE102006015077.5 20060331
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
By recessing drain and source regions, a highly stressed layer, such as a contact etch stop layer, may be formed in the recess in order to enhance the strain generation in the adjacent channel region of a field effect transistor. Moreover, a strained semiconductor material may be positioned in close proximity to the channel region by reducing or avoiding undue relaxation effects of metal silicides, thereby also providing enhanced efficiency for the strain generation. In some aspects, both effects may be combined to obtain an even more efficient strain-inducing mechanism.
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