发明申请
- 专利标题： Method of recovering valuable material from exhaust gas stream of a reaction chamber
- 专利标题（中）： 从反应室的废气流中回收有价物质的方法
-
申请号： US11400663申请日： 2006-04-07
-
公开(公告)号： US20070235059A1公开(公告)日： 2007-10-11
- 发明人: Schubert Chu , Frederick Wu , Christophe Marcadal , Seshadri Ganguli , Dien-Yeh Wu , Kavita Shah , Paul Ma
- 申请人： Schubert Chu , Frederick Wu , Christophe Marcadal , Seshadri Ganguli , Dien-Yeh Wu , Kavita Shah , Paul Ma
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 主分类号： B08B6/00
- IPC分类号： B08B6/00 ; C25F1/00
摘要：
A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.
公开/授权文献
信息查询
IPC分类:
