公开(公告)号：US07832432B2

公开(公告)日：2010-11-16

申请号：US12500319

申请日：2009-07-09

Applicant: Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

Inventor： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

IPC: F16K3/36 ,  F16K11/20

CPC classification number: C23C16/4481 ,  C23C16/4408 ,  C23C16/45561 ,  Y10T137/3127 ,  Y10T137/4259 ,  Y10T137/87249 ,  Y10T137/877

Abstract: Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line.

Abstract translation: 本文所述的实施方案提供用于容纳，储存或分配化学前体的安瓿组件。 在一个实施例中，提供安瓿组件，其包括安瓿，其包含设置在安瓿的外侧上的第一材料层和设置在第一材料层上的第二材料层，其中第一材料层比第二材料热导热 层，与安瓿流体连通并且容纳设置在其中的第一手动截止阀的入口管线，与安瓿流体连通并且容纳设置在其中的第二手动截止阀的出口管线和连接的第一旁路管线 在入口管线和出口管线之间。 在一些实施例中，安瓿组件可以包含断开配件。 在其他实施例中，第一旁路管线具有设置在其中的截止阀，以使入口管线和出口管线流体耦合或解耦。

公开(公告)号：US20070239586A1

公开(公告)日：2007-10-11

申请号：US11727397

申请日：2007-03-26

Applicant: Neil Inala ,  Ian Dembsky ,  Zachary Hildebrandt ,  Paul Ma

Inventor： Neil Inala ,  Ian Dembsky ,  Zachary Hildebrandt ,  Paul Ma

IPC: G06Q40/00

CPC classification number: G06Q40/06

Abstract: A system and method for rebalancing separately managed accounts utilizing sub-models. Sub-models can be generated automatically by analyzing the restrictions that exist on the individual accounts, or created manually by identifying particular stocks that might fall within a particular industry, sector or other arbitrary classification. An account can be classified as belonging to one or more sub-models. These sub-models allow for a more efficient rebalancing process by allowing transaction decisions to be made according to a particular sub-model rather than at the level of each individual account. These sub-models also allow for more efficient monitoring of large numbers of accounts by allowing analysis of account drift according to both restrictions associated with the account as well as the account's master model portfolio, rather than solely relative to the account's master model portfolio without incorporating the account's restrictions.

Abstract translation: 使用子模型重新平衡单独管理的帐户的系统和方法。 可以通过分析个人账户上存在的限制来自动生成子模型，或通过识别可能属于特定行业，部门或其他任意分类的特定股票来手动创建子模型。 一个帐户可以归类为属于一个或多个子模型。 这些子模型允许通过允许根据特定子模型进行交易决策而不是在每个单独帐户的级别进行更有效的重新平衡过程。 这些子模型还允许通过根据与帐户相关联的限制以及帐户的主模型组合来分析账户流失，而不是仅仅相对于账户的主模型组合而没有并入，从而更有效地监视大量账户 帐户的限制。

公开(公告)号：US20070054487A1

公开(公告)日：2007-03-08

申请号：US11470466

申请日：2006-09-06

Applicant: PAUL MA ,  KAVITA SHAH ,  DIEN-YEH WU ,  SESHADRI GANGULI ,  CHRISTOPHE MARCADAL ,  FREDERICK WU ,  SCHUBERT CHU

Inventor： PAUL MA ,  KAVITA SHAH ,  DIEN-YEH WU ,  SESHADRI GANGULI ,  CHRISTOPHE MARCADAL ,  FREDERICK WU ,  SCHUBERT CHU

IPC: H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846

Abstract: Embodiments of the invention provide a method for depositing ruthenium materials on a substrate by various vapor deposition processes, such as atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD). In one aspect, the process has little or no initiation delay and maintains a fast deposition rate while forming a ruthenium material. The ruthenium material may be deposited with good step coverage, strong adhesion, and contains a low carbon concentration for high electrical conductivity. The method for depositing the ruthenium material on a substrate generally includes sequentially exposing the substrate to a pyrrolyl ruthenium precursor and a reagent during the ALD process. The pyrrolyl ruthenium precursor contains ruthenium and at least one pyrrolyl ligand. In some examples, the reagent may contain a plasma of ammonia, nitrogen, or hydrogen during a PE-ALD process. In other examples, a reducing gas may be used during a thermal ALD process.

公开(公告)号：US20100062149A1

公开(公告)日：2010-03-11

申请号：US12465471

申请日：2009-05-13

Applicant: Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

Inventor： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

IPC: B05D5/12

CPC classification number: H01L21/76841 ,  C23C16/45534 ,  C23C16/52

Abstract: Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).

Abstract translation: 本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。 在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前 到和/或在ALD过程期间。 可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。 在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体 含有二甲胺（DMA）。

公开(公告)号：US07568495B2

公开(公告)日：2009-08-04

申请号：US11925670

申请日：2007-10-26

Applicant: Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

Inventor： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

IPC: F16K3/36 ,  F16K11/20

CPC classification number: C23C16/4481 ,  C23C16/4408 ,  C23C16/45561 ,  Y10T137/3127 ,  Y10T137/4259 ,  Y10T137/87249 ,  Y10T137/877

Abstract: Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the input line and the outlet line.

Abstract translation: 本文所述的实施方案提供用于容纳，储存或分配化学前体的安瓿组件。 在一个实施例中，提供安瓿组件，其包括安瓿，其包含设置在安瓿的外侧上的第一材料层和设置在第一材料层上的第二材料层，其中第一材料层比第二材料热导热 层，与安瓿流体连通并且容纳设置在其中的第一手动截止阀的入口管线，与安瓿流体连通并且容纳设置在其中的第二手动截止阀的出口管线和连接的第一旁路管线 在入口管线和出口管线之间。 在一些实施例中，安瓿组件可以包含断开配件。 在其他实施例中，第一旁路管线具有设置在其中的截止阀，以便将输入管线和出口管线流体耦合或解耦。

公开(公告)号：US07562672B2

公开(公告)日：2009-07-21

申请号：US11394448

申请日：2006-03-30

Applicant: Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

Inventor： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

IPC: F16K3/36 ,  F16K11/20

CPC classification number: C23C16/4481 ,  C23C16/4408 ,  C23C16/45561 ,  Y10T137/3127 ,  Y10T137/4259 ,  Y10T137/87249 ,  Y10T137/877

Abstract: An ampoule assembly is configured with a bypass line and valve to allow the purging of the lines and valves connected to the ampoule. The ampoule assembly, in one embodiment, includes an ampoule, an inlet line, an outlet line, and a bypass line connected between the inlet line and the outlet line, the bypass line having a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line. The shut-off valve disposed in the bypass line may be remotely controllable. Also, additional remotely controllable shut-off valves may be provided in the inlet and the outlet lines.

Abstract translation: 安瓿组件配置有旁通管线和阀，以允许清洗连接到安瓿的管线和阀。 在一个实施例中，安瓿组件包括安瓿瓶，入口管线，出口管线和连接在入口管线和出口管线之间的旁通管线，旁通管线具有设置在其中的截止阀以流体耦合或解耦 入口管线和出口管路。 设置在旁路管路中的截止阀可以是远程控制的。 此外，可以在入口和出口管线中设置附加的可远程控制的截止阀。

公开(公告)号：US20090053426A1

公开(公告)日：2009-02-26

申请号：US12201976

申请日：2008-08-29

Applicant: JIANG LU ,  Hyoung-Chan Ha ,  Paul Ma ,  Seshadri Ganguli ,  Joseph F. Aubuchon ,  Sang Ho Yu ,  Murali K. Narasimhan

Inventor： JIANG LU ,  Hyoung-Chan Ha ,  Paul Ma ,  Seshadri Ganguli ,  Joseph F. Aubuchon ,  Sang Ho Yu ,  Murali K. Narasimhan

IPC: B05D5/12 ,  B05D3/06

CPC classification number: H01L21/76871 ,  C23C16/16 ,  C23C16/18 ,  C23C16/42 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873

Abstract: Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.

Abstract translation: 本发明的实施方案提供了在阻挡层上沉积钴层并随后在其上沉积诸如铜或铜合金的导电材料的方法。 在一个实施例中，提供了一种在衬底表面上沉积材料的方法，其包括在衬底上形成阻挡层，将衬底暴露于六羰基丁基乙炔二钴（CCTBA）和氢，以在气相沉积期间在阻挡层上形成钴层 工艺（例如，CVD或ALD），以及在钴层上沉积导电材料。 在一些实例中，阻挡层和/或钴层可以在诸如热处理，原位等离子体处理或远程等离子体处理的处理过程中暴露于气体或试剂。

公开(公告)号：US20080268171A1

公开(公告)日：2008-10-30

申请号：US11873129

申请日：2007-10-16

Applicant: PAUL MA ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick C. Wu ,  Schubert S. Chu

Inventor： PAUL MA ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick C. Wu ,  Schubert S. Chu

IPC: C23C16/00

CPC classification number: C23C16/45544 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01L21/28562 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a plasma baffle assembly for receiving a process gas within a plasma-enhanced vapor deposition chamber is provided which includes a plasma baffle plate containing an upper surface to receive a process gas and a lower surface to emit the process gas, a plurality of openings configured to flow the process gas from above the upper surface to below the lower surface, wherein each opening is positioned at a predetermined angle of a vertical axis that is perpendicular to the lower surface, and a conical nose cone on the upper surface. In one example, the openings are slots positioned at a predetermined angle to emit the process gas with a circular flow pattern.

Abstract translation: 本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。 在一个实施例中，提供了用于接收等离子体增强气相沉积室内的处理气体的等离子体挡板组件，其包括含有上表面以接收处理气体的等离子体挡板和用于发射处理气体的下表面，多个 的开口，其被配置为使处理气体从上表面上方流动到下表面下方，其中每个开口定位在垂直于下表面的垂直轴线的预定角度以及在上表面上的锥形鼻锥。 在一个示例中，开口是以预定角度定位的槽，以以圆形流动图案发射处理气体。

公开(公告)号：US20070235085A1

公开(公告)日：2007-10-11

申请号：US11394448

申请日：2006-03-30

Applicant: Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert Chu

Inventor： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert Chu

IPC: F16K3/36 ,  F16K11/20

CPC classification number: C23C16/4481 ,  C23C16/4408 ,  C23C16/45561 ,  Y10T137/3127 ,  Y10T137/4259 ,  Y10T137/87249 ,  Y10T137/877

Abstract: An ampoule assembly is configured with a bypass line and valve to allow the purging of the lines and valves connected to the ampoule. The ampoule assembly, in one embodiment, includes an ampoule, an inlet line, an outlet line, and a bypass line connected between the inlet line and the outlet line, the bypass line having a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line. The shut-off valve disposed in the bypass line may be remotely controllable. Also, additional remotely controllable shut-off valves may be provided in the inlet and the outlet lines.

Abstract translation: 安瓿组件配置有旁通管线和阀，以允许清洗连接到安瓿的管线和阀。 在一个实施例中，安瓿组件包括安瓿瓶，入口管线，出口管线和连接在入口管线和出口管线之间的旁通管线，旁通管线具有设置在其中的截止阀以流体耦合或解耦 入口管线和出口管路。 设置在旁路管路中的截止阀可以是远程控制的。 此外，可以在入口和出口管线中设置附加的可远程控制的截止阀。

公开(公告)号：US20070235059A1

公开(公告)日：2007-10-11

申请号：US11400663

申请日：2006-04-07

Applicant: Schubert Chu ,  Frederick Wu ,  Christophe Marcadal ,  Seshadri Ganguli ,  Dien-Yeh Wu ,  Kavita Shah ,  Paul Ma

Inventor： Schubert Chu ,  Frederick Wu ,  Christophe Marcadal ,  Seshadri Ganguli ,  Dien-Yeh Wu ,  Kavita Shah ,  Paul Ma

IPC: B08B6/00 ,  C25F1/00

CPC classification number: B08B7/0035 ,  C23C16/4405 ,  C23C16/52 ,  Y02C20/30 ,  Y10S438/905

Abstract: A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.

Abstract translation: 通过将清洁气体引入处理室，冲击与处理室连通的远程等离子体源中的等离子体来测量半导体处理室，测量等离子体的阻抗，将含有钌的沉积物汽化在 处理室以形成含钌气体混合物，并使气体混合物流过分析器并进入排气收集组件。 等离子体的阻抗与钌浓度结合的测量提供了室清洁度的精确指示。