发明申请
US20070238281A1 Depositing polar materials on non-polar semiconductor substrates
审中-公开
在非极性半导体衬底上沉积极性材料
- 专利标题： Depositing polar materials on non-polar semiconductor substrates
- 专利标题（中）： 在非极性半导体衬底上沉积极性材料
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申请号： US11391510申请日： 2006-03-28
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公开(公告)号： US20070238281A1公开(公告)日： 2007-10-11
- 发明人: Mantu Hudait , Mohamad Shaheen , Loren Chow , Peter Tolchinsky , Joel Fastenau , Dmitri Loubychev , Amy Liu , Suman Datta , Jack Kavalieros , Robert Chau
- 申请人： Mantu Hudait , Mohamad Shaheen , Loren Chow , Peter Tolchinsky , Joel Fastenau , Dmitri Loubychev , Amy Liu , Suman Datta , Jack Kavalieros , Robert Chau
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
Lattice mismatch and polar to non-polar issues may lead to dislocations and other defects between silicon or germanium substrates and group III-V materials such as indium antimonide. The provision of lattice matching layers and buffer layers may enable these defects to be reduced.
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