发明申请
- 专利标题: Process to open connection vias on a planarized surface
- 专利标题(中): 在平坦化表面上打开连接通孔的过程
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申请号: US11411555申请日: 2006-04-25
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公开(公告)号: US20070245557A1公开(公告)日: 2007-10-25
- 发明人: Amanda Baer , Hamid Balamane , Michael Feldbaum , Ming Jiang , Aron Pentek
- 申请人: Amanda Baer , Hamid Balamane , Michael Feldbaum , Ming Jiang , Aron Pentek
- 专利权人: HITACHI GLOBAL STORAGE TECHNOLOGIES
- 当前专利权人: HITACHI GLOBAL STORAGE TECHNOLOGIES
- 主分类号: H01K3/10
- IPC分类号: H01K3/10
摘要:
A method for forming a via in an alumina protective layer on a structure such as a magnetic write head for use in perpendicular magnetic recording. A substrate such as an alumina fill layer, magnetic shaping layer, etc. is formed with region having a contact pad formed therein. A structure such as a magnetic pole, and or magnetic trailing shield, is formed over the substrate and is covered with a thick layer of alumina. The alumina can be applied by a high deposition rate process that does not form voids or seams in the alumina layer. The alumina layer can then be planarized by a chemical mechanical polishing process (CMP) and then a mask structure, such as a photoresist mask, is formed over the alumina layer. The mask structure is formed with an opening disposed over the contact pad. A reactive ion mill is then performed to remove portions of the alumina layer that are exposed at the opening in the mask, thereby forming a via in the alumina layer. The mask can then be lifted off and an electrically conductive material can be deposited into the via. Forming the via by a subtractive method rather than by a liftoff process allows the alumina to be deposited in a manner that does not result in voids. The use of reactive ion milling allows the via to be well defined and formed with substantially vertical side walls rather than in a conical or outward spreading fashion as would be formed by other material removal processes such as wet etching.
公开/授权文献
- US07523550B2 Process to open connection vias on a planarized surface 公开/授权日:2009-04-28
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