发明申请
US20070262300A1 METHOD OF FORMING FINE PATTERN USING AZOBENZENE-FUNCTIONALIZED POLYMER AND METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE METHOD OF FORMING FINE PATTERN
失效
使用亚苄基酮官能化聚合物形成精细图案的方法和使用形成微细图案的方法制造基于氮化物的半导体发光器件的方法
- 专利标题: METHOD OF FORMING FINE PATTERN USING AZOBENZENE-FUNCTIONALIZED POLYMER AND METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE METHOD OF FORMING FINE PATTERN
- 专利标题(中): 使用亚苄基酮官能化聚合物形成精细图案的方法和使用形成微细图案的方法制造基于氮化物的半导体发光器件的方法
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申请号: US11683096申请日: 2007-03-07
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公开(公告)号: US20070262300A1公开(公告)日: 2007-11-15
- 发明人: Jae-hee CHO , Cheol-soo SONE , Dong-yu KIM , Hyun-gi HONG , Seok-soon KIM
- 申请人: Jae-hee CHO , Cheol-soo SONE , Dong-yu KIM , Hyun-gi HONG , Seok-soon KIM
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2006-0042385 20060511
- 主分类号: G03C5/00
- IPC分类号: G03C5/00 ; H01L29/808
摘要:
Provided is a method of forming a fine pattern having a pattern dimension of 1 μm or less, repeatedly with reproducibility. The method of forming the fine pattern includes: forming an azobenzene-functionalized polymer film on an etched layer; irradiating the azobenzene-functionalized polymer film using an interference laser beam to form a patterned azobenzene-functionalized polymer film having fine-patterned surface relief gratings by a photophysical mass transporting of the azobenzene-functionalized polymer; etching the etched layer using the azobenzene-functionalized polymer film having the surface relief grating patterns as an etching mask; and removing the patterned azobenzene-functionalized polymer film.
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