METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE
    1.
    发明申请
    METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    制造基于氮化物的半导体发光器件的方法

    公开(公告)号:US20070269918A1

    公开(公告)日:2007-11-22

    申请号:US11690504

    申请日:2007-03-23

    IPC分类号: H01L21/00

    摘要: Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having an improved structure in which optical extraction efficiency is improved. The method of manufacturing a nitride-based semiconductor light-emitting device including an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer, an n-electrode and a p-electrode includes: forming an azobenzene-functionalized polymer film on a base layer by selecting one layer from the group consisting of the n-doped semiconductor layer, the p-doped semiconductor layer, the n-electrode and the p-electrode as the base layer; forming surface relief gratings of a micro-pattern caused by a photophysical mass transport property of azobenzene-functionalized polymer by irradiating interference laser beams onto the azobenzene-functionalized polymer film; forming a photonic crystal layer using a metal oxide on a recessed gap of the azobenzene-functionalized polymer film, and removing the azobenzene-functionalized polymer film.

    摘要翻译: 提供一种制造具有提高光学提取效率的改进结构的氮化物类半导体发光器件的方法。 包括n掺杂半导体层,有源层,p掺杂半导体层,n电极和p电极的氮化物系半导体发光元件的制造方法包括:形成偶氮苯官能化的聚合物膜 通过从由n掺杂半导体层,p掺杂半导体层,n电极和p电极组成的组中选择一层作为基底层,在基底层上; 通过将干涉激光束照射到偶氮苯官能化聚合物膜上,形成由偶氮苯官能化聚合物的光物理质量传递性质引起的微图案的表面起伏光栅; 在偶氮苯官能化聚合物膜的凹陷间隙上使用金属氧化物形成光子晶体层,并除去偶氮苯官能化的聚合物膜。

    METHOD OF FORMING FINE PATTERN USING AZOBENZENE-FUNCTIONALIZED POLYMER AND METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE METHOD OF FORMING FINE PATTERN
    2.
    发明申请
    METHOD OF FORMING FINE PATTERN USING AZOBENZENE-FUNCTIONALIZED POLYMER AND METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE METHOD OF FORMING FINE PATTERN 失效
    使用亚苄基酮官能化聚合物形成精细图案的方法和使用形成微细图案的方法制造基于氮化物的半导体发光器件的方法

    公开(公告)号:US20070262300A1

    公开(公告)日:2007-11-15

    申请号:US11683096

    申请日:2007-03-07

    IPC分类号: G03C5/00 H01L29/808

    摘要: Provided is a method of forming a fine pattern having a pattern dimension of 1 μm or less, repeatedly with reproducibility. The method of forming the fine pattern includes: forming an azobenzene-functionalized polymer film on an etched layer; irradiating the azobenzene-functionalized polymer film using an interference laser beam to form a patterned azobenzene-functionalized polymer film having fine-patterned surface relief gratings by a photophysical mass transporting of the azobenzene-functionalized polymer; etching the etched layer using the azobenzene-functionalized polymer film having the surface relief grating patterns as an etching mask; and removing the patterned azobenzene-functionalized polymer film.

    摘要翻译: 提供了一种以重现性反复形成图案尺寸为1μm或更小的精细图案的方法。 形成微细图案的方法包括:在蚀刻层上形成偶氮苯官能化聚合物膜; 使用干涉激光束照射偶氮苯官能化的聚合物膜,通过偶氮苯官能化聚合物的光物理传输形成具有精细图案化表面起伏光栅的图案化偶氮苯官能化聚合物膜; 使用具有表面起弧光栅图案的偶氮苯官能化聚合物膜作为蚀刻掩模蚀刻蚀刻层; 并除去图案化的偶氮苯官能化聚合物膜。