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发明申请
US20070284676A1 Semiconductor Device Having Multiple Work Functions and Method of Manufacture Therefor 审中-公开
具有多功能功能的半导体器件及其制造方法

Semiconductor Device Having Multiple Work Functions and Method of Manufacture Therefor
摘要：
The present invention provides a semiconductor device, a method of manufacture therefor, and a method for manufacturing an integrated circuit. The semiconductor device (100), among other possible elements, includes a first transistor (120) located over a semiconductor substrate (110), wherein the first transistor (120) has a metal gate electrode (135) having a work function, and a second transistor (160) located over the semiconductor substrate (110) and proximate the first transistor (120), wherein the second transistor (160) has a plasma altered metal gate electrode (175) having a different work function.
摘要（中）：

本发明提供一种半导体器件及其制造方法以及集成电路的制造方法。 半导体器件（100）以及其他可能的元件包括位于半导体衬底（110）上方的第一晶体管（120），其中第一晶体管（120）具有具有功函数的金属栅电极（135） 第二晶体管（160）位于半导体衬底（110）上并且靠近第一晶体管（120），其中第二晶体管（160）具有具有不同功函数的等离子体改变的金属栅电极（175）。

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