发明申请
- 专利标题: Artificial dielectrics using nanostructures
- 专利标题(中): 使用纳米结构的人造电介质
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申请号: US11203432申请日: 2005-08-15
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公开(公告)号: US20070296032A1公开(公告)日: 2007-12-27
- 发明人: David Stumbo , Stephen Empedocles , Francisco Leon , J. Parce
- 申请人: David Stumbo , Stephen Empedocles , Francisco Leon , J. Parce
- 申请人地址: US CA Palo Alto
- 专利权人: Nanosys, Inc.
- 当前专利权人: Nanosys, Inc.
- 当前专利权人地址: US CA Palo Alto
- 主分类号: H01L27/12
- IPC分类号: H01L27/12
摘要:
Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be adjusted by varying the length, diameter, carrier density, shape, aspect ratio, orientation and density of the nanostructures. Additionally, a controllable artificial dielectric using nanostructures, such as nanowires, is disclosed in which the dielectric constant can be dynamically adjusted by applying an electric field to the controllable artificial dielectric. A wide range of electronic devices can use artificial dielectrics with nanostructures to improve performance. Example devices include, capacitors, thin film transistors, other types of thin film electronic devices, microstrip devices, surface acoustic wave (SAW) filters, other types of filters, and radar attenuating materials
公开/授权文献
- US07365395B2 Artificial dielectrics using nanostructures 公开/授权日:2008-04-29