发明申请
US20080001190A1 Semiconductor device with recess gate and method of fabricating the same
审中-公开
具有凹槽的半导体器件及其制造方法
- 专利标题： Semiconductor device with recess gate and method of fabricating the same
- 专利标题（中）： 具有凹槽的半导体器件及其制造方法
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申请号： US11644883申请日： 2006-12-26
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公开(公告)号： US20080001190A1公开(公告)日： 2008-01-03
- 发明人: Young-Kyun Jung
- 申请人： Young-Kyun Jung
- 专利权人： HYNIX Semiconductor Inc.
- 当前专利权人： HYNIX Semiconductor Inc.
- 优先权： KR10-2006-0060293 20060630
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A semiconductor device with a recess gate includes a substrate, a semiconductive layer having an opening corresponding to a gate region, a gate electrode filled in the opening, and a gate insulating layer interposed between the gate electrode and the substrate, and between the gate electrode and the semiconductive layer.
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