发明申请
US20080017936A1 Semiconductor device structures (gate stacks) with charge compositions
审中-公开
具有电荷组成的半导体器件结构(栅极堆叠)
- 专利标题: Semiconductor device structures (gate stacks) with charge compositions
- 专利标题(中): 具有电荷组成的半导体器件结构(栅极堆叠)
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申请号: US11477707申请日: 2006-06-29
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公开(公告)号: US20080017936A1公开(公告)日: 2008-01-24
- 发明人: Douglas A. Buchanan , Eduard A. Cartier , Kevin K. Chan , Leland Chang , Christopher P. D'Emic , Martin M. Frank , Evgeni Gusev , Jin-Ping Han , Rajarao Jammy , Vamsi K. Paruchuri , Sufi Zafar
- 申请人: Douglas A. Buchanan , Eduard A. Cartier , Kevin K. Chan , Leland Chang , Christopher P. D'Emic , Martin M. Frank , Evgeni Gusev , Jin-Ping Han , Rajarao Jammy , Vamsi K. Paruchuri , Sufi Zafar
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/94
- IPC分类号: H01L29/94 ; H01L29/76 ; H01L31/00
摘要:
A semiconductor structure, particularly a gate stack, useful in field effect transistors (FETs) in which the threshold voltage thereof is controlled by introducing a fixed spatial distribution of electric charge density to the gate dielectric material and a method of forming the same are provided. nFETs and/or pFETs structures are disclosed. In accordance with the present invention, the fixed spatial distribution of electric charge density of the gate stack or FET denotes an electrical charge density that occupies space which remains substantially constant as a function of time under device operation conditions and is non-zero at least at one location within the dielectric material or at its interface with the channel, gate electrode, spacer, or any other structural elements of the device.