发明申请
- 专利标题: TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION
- 专利标题(中): 温度控制离子植入技术
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申请号: US11778335申请日: 2007-07-16
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公开(公告)号: US20080042078A1公开(公告)日: 2008-02-21
- 发明人: Jonathan Gerald ENGLAND , Richard Stephen Muka , Scott C. Holden
- 申请人: Jonathan Gerald ENGLAND , Richard Stephen Muka , Scott C. Holden
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01J37/08
- IPC分类号: H01J37/08
摘要:
Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer.
公开/授权文献
- US07655933B2 Techniques for temperature-controlled ion implantation 公开/授权日:2010-02-02